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| 001 | 1021729 | ||
| 005 | 20240226075406.0 | ||
| 037 | _ | _ | |a FZJ-2024-00969 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 0 |e Corresponding author |u fzj |
| 111 | 2 | _ | |a International Cooperation On Semiconductors Workshop |g ICOS |c Grenoble |d 2023-04-26 - 2023-04-28 |w France |
| 245 | _ | _ | |a Gate all around nanowire FETs: Operation from RT to Cryogenic temperatures |
| 260 | _ | _ | |c 2023 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1706528729_21453 |2 PUB:(DE-HGF) |x Invited |
| 520 | _ | _ | |a Gate-all-around (GAA) nanowire (NW) FETs have emerged as highly promising candidates for ultra-short channel FETs, owing to their superior electrostatics. In this presentation, we will discuss our research on Si and GeSn nanowire GAA FETs, with a particular emphasis on their steep slope switching at cryogenic temperatures. Our study has significant implications for the development of cryogenic computing applications. |
| 536 | _ | _ | |a 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522) |0 G:(DE-HGF)POF4-5221 |c POF4-522 |f POF IV |x 0 |
| 536 | _ | _ | |a DFG project 422581876 - Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen (422581876) |0 G:(GEPRIS)422581876 |c 422581876 |x 1 |
| 909 | C | O | |o oai:juser.fz-juelich.de:1021729 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)128649 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Natural, Artificial and Cognitive Information Processing |1 G:(DE-HGF)POF4-520 |0 G:(DE-HGF)POF4-522 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Quantum Computing |9 G:(DE-HGF)POF4-5221 |x 0 |
| 914 | 1 | _ | |y 2023 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
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