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@ARTICLE{Sun:1021845,
      author       = {Sun, Jingxuan and Han, Yi and Junk, Yannik and Concepción,
                      Omar and Bae, Jin-Hee and Grützmacher, Detlev and Buca, Dan
                      and Zhao, Qing-Tai},
      title        = {{L}ow contact resistance of {N}i{G}e{S}n on n-{G}e{S}n},
      journal      = {Solid state electronics},
      volume       = {211},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2024-00994},
      pages        = {108814 -},
      year         = {2024},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) /
                      Verbundprojekt: Erforschung nanoelektronischer
                      Höchstleistungs-Bauelemente für innovative Elektronik auf
                      Basis neuer Materialsysteme - ForMikro-SiGeSn-NanoFETs - ,
                      Teilvorhaben: CVD-basierte Herstellung von
                      SiGeSn-Halbleiterheterostrukturen und vertikalen (16ES1074)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(BMBF)16ES1074},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001111402500001},
      doi          = {10.1016/j.sse.2023.108814},
      url          = {https://juser.fz-juelich.de/record/1021845},
}