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001021851 005__ 20240226075408.0
001021851 0247_ $$2doi$$a10.23919/VLSITechnologyandCir57934.2023.10185373
001021851 037__ $$aFZJ-2024-01000
001021851 1001_ $$0P:(DE-Juel1)176845$$aHan, Yi$$b0$$eCorresponding author$$ufzj
001021851 1112_ $$a2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)$$cKyoto$$d2023-06-11 - 2023-06-16$$wJapan
001021851 245__ $$aHigh Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain
001021851 260__ $$c2023
001021851 3367_ $$033$$2EndNote$$aConference Paper
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001021851 520__ $$aThe effect of band edge states is the critical issue for cryogenic CMOS, which worsens the performance of conventional MOSFETs at cryogenic temperature (Cryo-T) with saturated subthreshold swing (SS), large transition region (inflection phenomenon) and limited mobility. To address these problems, we fabricated gate-all-around (GAA) Si nanowire (NW) MOSFETs using fully silicided source/drain and dopant segregation. The effect of band edge states is significantly uppressed using this technology. Thus, SS, the effective average SSth and the transconductance (Gm) continuously improve as temperature decreases allowing us to achieve high performance NW FETs at 5.5 K with a record small SS of 2.3 mV/dec, ltra-small DIBL of 0.02 mV/V, and high Gm of 1.25mS/µm at Vd = 0.1 V.
001021851 536__ $$0G:(DE-HGF)POF4-5221$$a5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522)$$cPOF4-522$$fPOF IV$$x0
001021851 536__ $$0G:(GEPRIS)422581876$$aDFG project 422581876 - Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen (422581876)$$c422581876$$x1
001021851 588__ $$aDataset connected to CrossRef Conference
001021851 7001_ $$0P:(DE-Juel1)186864$$aSun, Jingxuan$$b1$$ufzj
001021851 7001_ $$0P:(DE-Juel1)177006$$aBae, Jin-Hee$$b2$$ufzj
001021851 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b3$$ufzj
001021851 7001_ $$0P:(DE-HGF)0$$aKnoch, Joachim$$b4
001021851 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b5$$ufzj
001021851 773__ $$a10.23919/VLSITechnologyandCir57934.2023.10185373
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001021851 9141_ $$y2023
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