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@INPROCEEDINGS{Han:1021851,
      author       = {Han, Yi and Sun, Jingxuan and Bae, Jin-Hee and
                      Grützmacher, Detlev and Knoch, Joachim and Zhao, Qing-Tai},
      title        = {{H}igh {P}erformance 5 nm {S}i {N}anowire {FET}s with a
                      {R}ecord {S}mall {SS} = 2.3 m{V}/dec and {H}igh
                      {T}ransconductance at 5.5 {K} {E}nabled by {D}opant
                      {S}egregated {S}ilicide {S}ource/{D}rain},
      reportid     = {FZJ-2024-01000},
      year         = {2023},
      abstract     = {The effect of band edge states is the critical issue for
                      cryogenic CMOS, which worsens the performance of
                      conventional MOSFETs at cryogenic temperature (Cryo-T) with
                      saturated subthreshold swing (SS), large transition region
                      (inflection phenomenon) and limited mobility. To address
                      these problems, we fabricated gate-all-around (GAA) Si
                      nanowire (NW) MOSFETs using fully silicided source/drain and
                      dopant segregation. The effect of band edge states is
                      significantly uppressed using this technology. Thus, SS, the
                      effective average SSth and the transconductance (Gm)
                      continuously improve as temperature decreases allowing us to
                      achieve high performance NW FETs at 5.5 K with a record
                      small SS of 2.3 mV/dec, ltra-small DIBL of 0.02 mV/V, and
                      high Gm of 1.25mS/µm at Vd = 0.1 V.},
      month         = {Jun},
      date          = {2023-06-11},
      organization  = {2023 IEEE Symposium on VLSI Technology
                       and Circuits (VLSI Technology and
                       Circuits), Kyoto (Japan), 11 Jun 2023 -
                       16 Jun 2023},
      subtyp        = {After Call},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5221 - Advanced Solid-State Qubits and Qubit Systems
                      (POF4-522) / DFG project 422581876 - Kryogene CMOS
                      Technologie für die Realisierung von von klassischen
                      QuBit-Kontrollschaltkreisen (422581876)},
      pid          = {G:(DE-HGF)POF4-5221 / G:(GEPRIS)422581876},
      typ          = {PUB:(DE-HGF)6},
      doi          = {10.23919/VLSITechnologyandCir57934.2023.10185373},
      url          = {https://juser.fz-juelich.de/record/1021851},
}