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@INPROCEEDINGS{Junk:1021913,
      author       = {Junk, Yannik and Frauenrath, Marvin and Han, Yi and Sun,
                      Jingxuan and Concepción Díaz, Omar and Bae, Jin Hee and
                      Hartmann, Jean-Michel and Grützmacher, Detlev and Buca, Dan
                      Mihai and Zhao, Qing-Tai},
      title        = {{V}ertical {G}e{S}n/{S}i{G}e{S}n {GAA} {N}anowire n-{FET}s
                      with {H}igh {E}lectron {M}obility},
      reportid     = {FZJ-2024-01061},
      year         = {2023},
      abstract     = {Vertical gate-all-around (GAA) nanowire (NW) FETs based on
                      Si compatible group IV GeSn alloys are presented. The NW
                      devices with diameter of 25 nm show an almost ideal
                      subthreshold swing (SS) of 65 mV/dec at 300 K. The increased
                      Sn content in the GeSn channel offers a larger population of
                      electrons in the Γ -valley that exhibit a lower effective
                      mass and larger mobility. This is confirmed by comparison of
                      two fabricated devices with $10\%$ and $8\%$ Sn content
                      channels, where the GeSn channel n-FETs with $10\%$ Sn
                      content shows larger ION and higher transconductance than
                      the one with $8\%$ Sn content. At low temperatures, the
                      devices show a low SS of 9 mV/dec as well as a very sharp
                      transition from subthreshold to on-state, revealing a high
                      potential for cryo-CMOS applications.},
      month         = {Apr},
      date          = {2023-04-17},
      organization  = {2023 International VLSI Symposium on
                       Technology, Systems and Applications
                       (VLSI-TSA/VLSI-DAT), Hsinchu (Taiwan),
                       17 Apr 2023 - 20 Apr 2023},
      subtyp        = {Panel discussion},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) /
                      Verbundprojekt: Erforschung nanoelektronischer
                      Höchstleistungs-Bauelemente für innovative Elektronik auf
                      Basis neuer Materialsysteme - ForMikro-SiGeSn-NanoFETs - ,
                      Teilvorhaben: CVD-basierte Herstellung von
                      SiGeSn-Halbleiterheterostrukturen und vertikalen (16ES1074)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(BMBF)16ES1074},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/1021913},
}