001021914 001__ 1021914
001021914 005__ 20240226075413.0
001021914 0247_ $$2doi$$a10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134252
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001021914 1001_ $$0P:(DE-Juel1)185010$$aJunk, Yannik$$b0$$eCorresponding author
001021914 1112_ $$a2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)$$cHsinchu$$d2023-04-17 - 2023-04-20$$wTaiwan
001021914 245__ $$aVertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
001021914 260__ $$bIEEE$$c2023
001021914 300__ $$a1-2
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001021914 520__ $$aVertical gate-all-around (GAA) nanowire (NW) FETs based on Si compatible group IV GeSn alloys are presented. The NW devices with diameter of 25 nm show an almost ideal subthreshold swing (SS) of 65 mV/dec at 300 K. The increased Sn content in the GeSn channel offers a larger population of electrons in the Γ -valley that exhibit a lower effective mass and larger mobility. This is confirmed by comparison of two fabricated devices with 10% and 8% Sn content channels, where the GeSn channel n-FETs with 10% Sn content shows larger ION and higher transconductance than the one with 8% Sn content. At low temperatures, the devices show a low SS of 9 mV/dec as well as a very sharp transition from subthreshold to on-state, revealing a high potential for cryo-CMOS applications.
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001021914 536__ $$0G:(BMBF)16ES1074$$aVerbundprojekt: Erforschung nanoelektronischer Höchstleistungs-Bauelemente für innovative Elektronik auf Basis neuer Materialsysteme - ForMikro-SiGeSn-NanoFETs - , Teilvorhaben: CVD-basierte Herstellung von SiGeSn-Halbleiterheterostrukturen und vertikalen (16ES1074)$$c16ES1074$$x1
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001021914 7001_ $$0P:(DE-HGF)0$$aFrauenrath, Marvin$$b1
001021914 7001_ $$0P:(DE-Juel1)176845$$aHan, Yi$$b2$$ufzj
001021914 7001_ $$0P:(DE-Juel1)186864$$aSun, Jingxuan$$b3$$ufzj
001021914 7001_ $$0P:(DE-Juel1)188576$$aDiaz, Omar Concepción$$b4$$ufzj
001021914 7001_ $$0P:(DE-Juel1)177006$$aBae, Jin-Hee$$b5$$ufzj
001021914 7001_ $$0P:(DE-HGF)0$$aHartmann, Jean-Michel$$b6
001021914 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b7$$ufzj
001021914 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan$$b8$$ufzj
001021914 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b9$$ufzj
001021914 773__ $$a10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134252
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001021914 9141_ $$y2023
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