TY  - CONF
AU  - Junk, Yannik
AU  - Frauenrath, Marvin
AU  - Han, Yi
AU  - Sun, Jingxuan
AU  - Diaz, Omar Concepción
AU  - Bae, Jin-Hee
AU  - Hartmann, Jean-Michel
AU  - Grützmacher, Detlev
AU  - Buca, Dan
AU  - Zhao, Qing-Tai
TI  - Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility
PB  - IEEE
M1  - FZJ-2024-01062
SP  - 1-2
PY  - 2023
AB  - Vertical gate-all-around (GAA) nanowire (NW) FETs based on Si compatible group IV GeSn alloys are presented. The NW devices with diameter of 25 nm show an almost ideal subthreshold swing (SS) of 65 mV/dec at 300 K. The increased Sn content in the GeSn channel offers a larger population of electrons in the Γ -valley that exhibit a lower effective mass and larger mobility. This is confirmed by comparison of two fabricated devices with 10% and 8% Sn content channels, where the GeSn channel n-FETs with 10% Sn content shows larger ION and higher transconductance than the one with 8% Sn content. At low temperatures, the devices show a low SS of 9 mV/dec as well as a very sharp transition from subthreshold to on-state, revealing a high potential for cryo-CMOS applications.
T2  - 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
CY  - 17 Apr 2023 - 20 Apr 2023, Hsinchu (Taiwan)
Y2  - 17 Apr 2023 - 20 Apr 2023
M2  - Hsinchu, Taiwan
LB  - PUB:(DE-HGF)8
UR  - <Go to ISI:>//WOS:001012107600068
DO  - DOI:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134252
UR  - https://juser.fz-juelich.de/record/1021914
ER  -