Home > Publications database > Synapses with homo/hetero-synaptic plasticity enabled by ferroelectric polarization modulated Schottky diodes > print

001     1022082
005     20240226075426.0
024 7 _ |a 10.34734/FZJ-2024-01219
|2 datacite_doi
037 _ _ |a FZJ-2024-01219
041 _ _ |a English
100 1 _ |a Grenmyr, Andreas
|0 P:(DE-Juel1)188135
|b 0
|e First author
111 2 _ |a International conference on neuromorphic, natural and physical computing
|g NNPC
|c Hannover
|d 2023-10-25 - 2023-10-27
|w Germany
245 _ _ |a Synapses with homo/hetero-synaptic plasticity enabled by ferroelectric polarization modulated Schottky diodes
260 _ _ |c 2023
336 7 _ |a Abstract
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336 7 _ |a Conference Paper
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520 _ _ |a Several recently proposed synapses suffer from limited linearity or constrained means of weight adjustment, which can be overcome by incorporating additional modulating terminals. In this study, we explore the use of ferroelectric Schottky transistors (FE-SBFETs) with either a single or dual gate, which exhibit excellent linearity and demonstrate the potential of the second gate terminal for modulation. The incorporation of multiple gates can enable more sophisticated control of the synapse, resulting in greater flexibility for tuning the synaptic weight. The demonstrated high linearity is critical for precise and accurate weight adjustment, as it allows for a larger number of distinguishable conductive states. Therefore, the incorporation of multiple gates and input terminals represents a promising direction for developing more versatile and high-performance neuromorphic devices.
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700 1 _ |a Zhang, Jiayuan
|0 P:(DE-Juel1)186618
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700 1 _ |a Xi, Fengben
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700 1 _ |a Wiefels, Stefan
|0 P:(DE-Juel1)187229
|b 3
700 1 _ |a Grützmacher, Detlev
|0 P:(DE-Juel1)125588
|b 4
700 1 _ |a Zhao, Qing-Tai
|0 P:(DE-Juel1)128649
|b 5
856 4 _ |u https://juser.fz-juelich.de/record/1022082/files/Abstract3%20NNPC2_Zhao_Andreas_Final%283%29.docx
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:1022082
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|v Neuromorphic Computing and Network Dynamics
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914 1 _ |y 2023
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