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@ARTICLE{CorleyWiciak:1023070,
      author       = {Corley-Wiciak, Agnieszka Anna and Chen, Shunda and
                      Concepción, Omar and Zoellner, Marvin Hartwig and
                      Grützmacher, Detlev and Buca, Dan and Li, Tianshu and
                      Capellini, Giovanni and Spirito, Davide},
      title        = {{L}ocal {A}lloy {O}rder in a {G}e 1 − x {S}n x / {G}e
                      {E}pitaxial {L}ayer},
      journal      = {Physical review applied},
      volume       = {20},
      number       = {2},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2024-01643},
      pages        = {024021},
      year         = {2023},
      abstract     = {The local ordering of atoms in alloys directly has a strong
                      impact on their electronic and opticalproperties. This is
                      particularly relevant in nonrandom alloys, especially if
                      they are deposited far fromthe equilibrium processes, as is
                      the case for epitaxial Ge1−xSnx layers. In this work, we
                      investigate thearrangement of Ge and Sn atoms in
                      optoelectronic grade Ge1−xSnx epitaxial layers featuring a
                      Sn contentin the $5–14\%$ range by using
                      polarization-dependent Raman spectroscopy and
                      density-functional-theorycalculations. The thorough analysis
                      of the polarization-dependent spectra in parallel and
                      perpendicularconfiguration allowed us to properly tag all
                      the observed vibrational modes, and to shed light on that
                      associatedto disorder-assisted Raman transitions. Indeed,
                      with the help of large-scale atomistic simulations,we were
                      able to highlight how the presence of Sn atoms, that modify
                      the local environments of Ge atoms,gives rise to two
                      spectral features at different Raman shifts, corresponding
                      to distortions of the atomicbonds. This analysis provides a
                      valuable framework for advancing the understanding of the
                      vibrationalproperties in Ge1−xSnx alloys, particularly
                      with regard to the impact of local ordering of the
                      differentatomic species.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001052945100001},
      doi          = {10.1103/PhysRevApplied.20.024021},
      url          = {https://juser.fz-juelich.de/record/1023070},
}