% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Martnez:1023072,
      author       = {Martínez, Karí and Minenkov, Alexey and Aberl, Johannes
                      and Buca, Dan and Brehm, Moritz and Groiss, Heiko},
      title        = {{I}n situ {TEM} heating experiments on thin epitaxial
                      {G}e{S}n layers: {M}odes of phase separation},
      journal      = {APL materials},
      volume       = {11},
      number       = {10},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2024-01645},
      pages        = {101117},
      year         = {2023},
      abstract     = {The thermal stability of GeSn epitaxial thin films was
                      investigated via in situ transmission electron microscopy
                      (TEM). Samples were grown with a similar layer structure and
                      10 $at.\%$ Sn content by either molecular beam epitaxy or
                      chemical vapor deposition. Despite the same layer thickness
                      and concentration, the decomposition mode differs
                      dramatically for each GeSn sample during annealing
                      experiments. We observed that the sample with a Ge buffer on
                      a Ge substrate is structurally stable up to 500 °C, while
                      above this temperature, β-Sn precipitates appear,
                      indicating a decomposition mechanism of solid-state
                      precipitation. On the other hand, the second sample
                      exhibited high susceptibility to Ga ion incorporation during
                      the focused ion beam TEM specimen preparation, which is
                      attributed to a high defect density owing to an atypically
                      thin Ge buffer layer grown on a Si substrate. In this case,
                      the efficient phase separation in the sample was facilitated
                      by Ga contamination, promoting the appearance of a
                      GaSn-based liquid phase at a temperature as low as
                      200 °C. The decomposition temperatures found and the
                      occurrence of the two different decomposition modes are
                      discussed in relation to the experimental methods used.},
      cin          = {PGI-9},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001099555300003},
      doi          = {10.1063/5.0167407},
      url          = {https://juser.fz-juelich.de/record/1023072},
}