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@ARTICLE{Frauenrath:1023073,
      author       = {Frauenrath, M. and Concepción Díaz, Omar and Gauthier, N.
                      and Nolot, E. and Buca, D. and Hartmann, J.-M.},
      title        = {{A}dvances in {I}n {S}itu {B}oron and {P}hosphorous
                      {D}oping of {S}i{G}e{S}n},
      journal      = {ECS journal of solid state science and technology},
      volume       = {12},
      number       = {6},
      issn         = {2162-8769},
      address      = {Pennington, NJ},
      publisher    = {ECS},
      reportid     = {FZJ-2024-01646},
      pages        = {064001 -},
      year         = {2023},
      abstract     = {Dopant concentrations higher than 1 × 1019 cm−3 are
                      required to improve the performances of various GeSn based
                      devices such as photodetectors, electrically pumped lasers
                      and so on. In this study, the in situ Boron and Phosphorous
                      doping of SiGeSn was investigated, building upon recent
                      studies on in situ B or P doped GeSn. The surfaces of
                      intrinsic and lowly doped pseudomorphic SiGeSn layers were
                      rough. By contrast, a 〈110〉 cross hatch was recovered
                      and surfaces as smooth as the Ge Strain-Relaxed Buffers
                      underneath were obtained for the highest B2H6 or PH3
                      mass-flows. The surface Root Mean Square roughness and
                      Zrange values were then as low as 0.36 nm and 2.86 nm for
                      SiGeSn:B, and 0.47 nm and 4.60 nm for SiGeSn:P. In addition,
                      Si contents as high as $25\%$ were obtained, notably in
                      SiGeSn:B layers. Dopants were almost fully electrically
                      active in those SiGeSn:B and SiGeSn:P layers, with carrier
                      concentrations as high as 2.0 × 1020 cm−3 and 2.7 × 1020
                      cm−3, respectively. For SiGeSn:P, the shortcoming of in
                      situ doped GeSn:P was overcome, that is the formation of
                      electrically inactive SnmPnV clusters for high PH3
                      mass-flows. Such electrically active carrier concentrations
                      will be beneficial for (Si)GeSn based devices, but also for
                      all Group-IV based devices with extremely low thermal budget
                      constraints.},
      cin          = {PGI-9},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000999127900001},
      doi          = {10.1149/2162-8777/acd720},
      url          = {https://juser.fz-juelich.de/record/1023073},
}