001023074 001__ 1023074
001023074 005__ 20250203103404.0
001023074 0247_ $$2doi$$a10.1088/1361-6463/acc597
001023074 0247_ $$2ISSN$$a0508-3443
001023074 0247_ $$2ISSN$$a0022-3727
001023074 0247_ $$2ISSN$$a0262-8171
001023074 0247_ $$2ISSN$$a1361-6463
001023074 0247_ $$2datacite_doi$$a10.34734/FZJ-2024-01647
001023074 0247_ $$2WOS$$aWOS:000970634100001
001023074 037__ $$aFZJ-2024-01647
001023074 082__ $$a530
001023074 1001_ $$0P:(DE-HGF)0$$aMagalhães, S.$$b0$$eCorresponding author
001023074 245__ $$aCombining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors
001023074 260__ $$aBristol$$bIOP Publ.$$c2023
001023074 3367_ $$2DRIVER$$aarticle
001023074 3367_ $$2DataCite$$aOutput Types/Journal article
001023074 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1709025883_32449
001023074 3367_ $$2BibTeX$$aARTICLE
001023074 3367_ $$2ORCID$$aJOURNAL_ARTICLE
001023074 3367_ $$00$$2EndNote$$aJournal Article
001023074 520__ $$aIn the present work, the importance of determining the strain states of semiconductor compounds with high accuracy is demonstrated. For the matter in question, new software titled LAPAs, the acronym for LAttice PArameters is presented. The lattice parameters as well as the chemical composition of Al1−xInxN and Ge1−xSnx compounds grown on top of GaN- and Ge- buffered c-Al2O3 and (001) oriented Si substrates, respectively, are calculated via the real space Bond’s method. The uncertainties in the lattice parameters and composition are derived, compared and discussed with the ones found via x-ray diffraction reciprocal space mapping. Broad peaks lead to increased centroid uncertainty and are found to constitute up to 99% of the total uncertainty in the lattice parameters. Refraction correction is included in the calculations and found to have an impact of 0.001 Å in the lattice parameters of both hexagonal and cubic crystallographic systems and below 0.01% in the quantification of the InN and Sn contents. Although the relaxation degrees of the nitride and tin compounds agree perfectly between the real and reciprocal-spaces methods, the uncertainty in the latter is found to be ten times higher. The impact of the findings may be substantial for the development of applications and devices as the intervals found for the lattice match the condition of Al1−xInxN grown on GaN templates vary between ∼1.8% (0.1675–0.1859) and 0.04% (0.1708–0.1712) if derived via the real- and reciprocal spaces methods.
001023074 536__ $$0G:(DE-HGF)POF4-5234$$a5234 - Emerging NC Architectures (POF4-523)$$cPOF4-523$$fPOF IV$$x0
001023074 588__ $$aDataset connected to CrossRef, Journals: juser.fz-juelich.de
001023074 7001_ $$0P:(DE-HGF)0$$aCabaço, J. S.$$b1
001023074 7001_ $$0P:(DE-Juel1)188576$$aConcepción, O.$$b2
001023074 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b3$$ufzj
001023074 7001_ $$0P:(DE-HGF)0$$aStachowicz, M.$$b4
001023074 7001_ $$0P:(DE-HGF)0$$aOliveira, F.$$b5
001023074 7001_ $$0P:(DE-HGF)0$$aCerqueira, M. F.$$b6
001023074 7001_ $$0P:(DE-Juel1)166052$$aLorenz, K.$$b7$$ufzj
001023074 7001_ $$0P:(DE-HGF)0$$aAlves, E.$$b8
001023074 773__ $$0PERI:(DE-600)1472948-9$$a10.1088/1361-6463/acc597$$gVol. 56, no. 24, p. 245102 -$$n24$$p245102 -$$tJournal of physics / D$$v56$$x0508-3443$$y2023
001023074 8564_ $$uhttps://juser.fz-juelich.de/record/1023074/files/Magalh%C3%A3es_2023_J._Phys._D%20_Appl._Phys._56_245102.pdf$$yOpenAccess
001023074 8564_ $$uhttps://juser.fz-juelich.de/record/1023074/files/Magalh%C3%A3es_2023_J._Phys._D%20_Appl._Phys._56_245102.gif?subformat=icon$$xicon$$yOpenAccess
001023074 8564_ $$uhttps://juser.fz-juelich.de/record/1023074/files/Magalh%C3%A3es_2023_J._Phys._D%20_Appl._Phys._56_245102.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
001023074 8564_ $$uhttps://juser.fz-juelich.de/record/1023074/files/Magalh%C3%A3es_2023_J._Phys._D%20_Appl._Phys._56_245102.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
001023074 8564_ $$uhttps://juser.fz-juelich.de/record/1023074/files/Magalh%C3%A3es_2023_J._Phys._D%20_Appl._Phys._56_245102.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
001023074 909CO $$ooai:juser.fz-juelich.de:1023074$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
001023074 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)188576$$aForschungszentrum Jülich$$b2$$kFZJ
001023074 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b3$$kFZJ
001023074 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)166052$$aForschungszentrum Jülich$$b7$$kFZJ
001023074 9131_ $$0G:(DE-HGF)POF4-523$$1G:(DE-HGF)POF4-520$$2G:(DE-HGF)POF4-500$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$9G:(DE-HGF)POF4-5234$$aDE-HGF$$bKey Technologies$$lNatural, Artificial and Cognitive Information Processing$$vNeuromorphic Computing and Network Dynamics$$x0
001023074 9141_ $$y2024
001023074 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)1230$$2StatID$$aDBCoverage$$bCurrent Contents - Electronics and Telecommunications Collection$$d2023-08-19
001023074 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
001023074 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)0113$$2StatID$$aWoS$$bScience Citation Index Expanded$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
001023074 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bJ PHYS D APPL PHYS : 2022$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)0430$$2StatID$$aNational-Konsortium$$d2023-08-19$$wger
001023074 915__ $$0StatID:(DE-HGF)0160$$2StatID$$aDBCoverage$$bEssential Science Indicators$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS$$d2023-08-19
001023074 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List$$d2023-08-19
001023074 920__ $$lyes
001023074 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
001023074 9201_ $$0I:(DE-Juel1)PTJ-ESN-20160331$$kPTJ-ESN$$lEnergiesystem: Nutzung$$x1
001023074 980__ $$ajournal
001023074 980__ $$aVDB
001023074 980__ $$aUNRESTRICTED
001023074 980__ $$aI:(DE-Juel1)PGI-9-20110106
001023074 980__ $$aI:(DE-Juel1)PTJ-ESN-20160331
001023074 9801_ $$aFullTexts