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@ARTICLE{Janssen:1024257,
      author       = {Janssen, Kevin and Rüssmann, Philipp and Liberda, Sergej
                      and Schleenvoigt, Michael and Hou, Xiao and Jalil, Abdur
                      Rehman and Lentz, Florian and Trellenkamp, Stefan and
                      Bennemann, Benjamin and Zimmermann, Erik and Mussler, Gregor
                      and Schüffelgen, Peter and Schneider, Claus-Michael and
                      Blügel, Stefan and Grützmacher, Detlev and Plucinski,
                      Lukasz and Schäpers, Thomas},
      title        = {{C}haracterization of single in situ prepared interfaces
                      composed of niobium and a selectively grown ( {B}i 1 − x
                      {S}b x ) 2 {T}e 3 topological insulator nanoribbon},
      journal      = {Physical review materials},
      volume       = {8},
      number       = {3},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2024-02064},
      pages        = {034205},
      year         = {2024},
      abstract     = {With increasing attention in Majorana physics for possible
                      quantum bit applications, a large interest has been
                      developed to understand the properties of the interface
                      between an s-type superconductor and a topological
                      insulator. Up to this point the interface analysis was
                      mainly focused on in situ prepared Josephson junctions,
                      which consist of two coupled single interfaces or to ex situ
                      fabricated single interface devices. In our work we utilize
                      a fabrication process, combining selective area growth and
                      shadow evaporation which allows the characterization of a
                      single in situ fabricated Nb/(Bi0.15Sb0.85)2Te3
                      nanointerface. The resulting high interface transparency is
                      apparent by a zero bias conductance increase by a factor of
                      1.7. Furthermore, we present a comprehensive differential
                      conductance analysis of our single in situ interface for
                      various magnetic fields, temperatures, and gate voltages.
                      Additionally, density functional theory calculations of the
                      superconductor/topological insulator interface are performed
                      in order to explain the peaklike shape of our differential
                      conductance spectra and the origin of the observed smearing
                      of conductance features.},
      cin          = {PGI-9 / PGI-6 / PGI-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      I:(DE-Juel1)PGI-1-20110106},
      pnm          = {5211 - Topological Matter (POF4-521) / DFG project
                      390534769 - EXC 2004: Materie und Licht für
                      Quanteninformation (ML4Q) (390534769)},
      pid          = {G:(DE-HGF)POF4-5211 / G:(GEPRIS)390534769},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001195873700004},
      doi          = {10.1103/PhysRevMaterials.8.034205},
      url          = {https://juser.fz-juelich.de/record/1024257},
}