%0 Journal Article
%A Zhang, Yongqiang
%A Boichuk, Nazarii
%A Pustovyi, Denys
%A Chekubasheva, Valeriia
%A Long, Hanlin
%A Petrychuk, Mykhailo
%A Vitusevich, Svetlana
%T Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
%J Advanced electronic materials
%V 10
%N 7
%@ 2199-160X
%C Weinheim
%I Wiley-VCH Verlag GmbH & Co. KG
%M FZJ-2024-02247
%P 2300855
%D 2024
%X High-quality liquid gate-all-around (LGAA) silicon nanowire (NW) field-effect transistor (FET) biosensors are fabricated and studied their properties in 1 mM phosphate-buffered saline solution with pH = 7.4 using transport and noise spectroscopy. At small VDS, the conventional current behavior of FET with a linear dependence on voltage is registered in the output current-voltage (I-VM) characteristics with M=1. At drain-source voltage VDS > 0.6 V, the I-V  characteristics with stronger power M are revealed. It is shown that the current in LGAA NW FETs follows current proportional to voltage in power M = 4 dependence on small liquid gate voltages. Transport and noise spectroscopy analyses demonstrate that the obtained results are associated with the space-charge-limited current (SCLC) effect. Moreover, a strong two-level random telegraph signal (RTS) is found in the region corresponding to SCLC at VDS values exceeding 0.6 V. The RTS related to single trap phenomena results in a well-resolved Lorentzian component of noise spectra. The results demonstrate that the SCLC and two-level RTS phenomenon are correlated effects. They should be taken into account during the development of single-trap-based devices, including biosensors.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001194156600001
%R 10.1002/aelm.202300855
%U https://juser.fz-juelich.de/record/1024571