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001024571 1001_ $$0P:(DE-Juel1)190570$$aZhang, Yongqiang$$b0$$ufzj
001024571 245__ $$aPeculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
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001024571 520__ $$aHigh-quality liquid gate-all-around (LGAA) silicon nanowire (NW) field-effect transistor (FET) biosensors are fabricated and studied their properties in 1 mM phosphate-buffered saline solution with pH = 7.4 using transport and noise spectroscopy. At small VDS, the conventional current behavior of FET with a linear dependence on voltage is registered in the output current-voltage (I-VM) characteristics with M=1. At drain-source voltage VDS > 0.6 V, the I-V  characteristics with stronger power M are revealed. It is shown that the current in LGAA NW FETs follows current proportional to voltage in power M = 4 dependence on small liquid gate voltages. Transport and noise spectroscopy analyses demonstrate that the obtained results are associated with the space-charge-limited current (SCLC) effect. Moreover, a strong two-level random telegraph signal (RTS) is found in the region corresponding to SCLC at VDS values exceeding 0.6 V. The RTS related to single trap phenomena results in a well-resolved Lorentzian component of noise spectra. The results demonstrate that the SCLC and two-level RTS phenomenon are correlated effects. They should be taken into account during the development of single-trap-based devices, including biosensors.
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001024571 7001_ $$0P:(DE-Juel1)171802$$aBoichuk, Nazarii$$b1$$ufzj
001024571 7001_ $$0P:(DE-Juel1)186785$$aPustovyi, Denys$$b2$$ufzj
001024571 7001_ $$0P:(DE-Juel1)194817$$aChekubasheva, Valeriia$$b3$$ufzj
001024571 7001_ $$0P:(DE-Juel1)175511$$aLong, Hanlin$$b4$$ufzj
001024571 7001_ $$0P:(DE-HGF)0$$aPetrychuk, Mykhailo$$b5
001024571 7001_ $$0P:(DE-Juel1)128738$$aVitusevich, Svetlana$$b6$$eCorresponding author
001024571 773__ $$0PERI:(DE-600)2810904-1$$a10.1002/aelm.202300855$$gp. 2300855$$n7$$p2300855$$tAdvanced electronic materials$$v10$$x2199-160X$$y2024
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