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@ARTICLE{Zhang:1024571,
      author       = {Zhang, Yongqiang and Boichuk, Nazarii and Pustovyi, Denys
                      and Chekubasheva, Valeriia and Long, Hanlin and Petrychuk,
                      Mykhailo and Vitusevich, Svetlana},
      title        = {{P}eculiarities of the {SCLC} {E}ffect in
                      {G}ate‐{A}ll‐{A}round {S}ilicon {N}anowire
                      {F}ield‐{E}ffect {T}ransistor {B}iosensors},
      journal      = {Advanced electronic materials},
      volume       = {10},
      number       = {7},
      issn         = {2199-160X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
      reportid     = {FZJ-2024-02247},
      pages        = {2300855},
      year         = {2024},
      abstract     = {High-quality liquid gate-all-around (LGAA) silicon nanowire
                      (NW) field-effect transistor (FET) biosensors are fabricated
                      and studied their properties in 1 mM phosphate-buffered
                      saline solution with pH = 7.4 using transport and noise
                      spectroscopy. At small VDS, the conventional current
                      behavior of FET with a linear dependence on voltage is
                      registered in the output current-voltage (I-VM)
                      characteristics with M=1. At drain-source voltage VDS > 0.6
                      V, the I-V characteristics with stronger power M are
                      revealed. It is shown that the current in LGAA NW FETs
                      follows current proportional to voltage in power M = 4
                      dependence on small liquid gate voltages. Transport and
                      noise spectroscopy analyses demonstrate that the obtained
                      results are associated with the space-charge-limited current
                      (SCLC) effect. Moreover, a strong two-level random telegraph
                      signal (RTS) is found in the region corresponding to SCLC at
                      VDS values exceeding 0.6 V. The RTS related to single trap
                      phenomena results in a well-resolved Lorentzian component of
                      noise spectra. The results demonstrate that the SCLC and
                      two-level RTS phenomenon are correlated effects. They should
                      be taken into account during the development of
                      single-trap-based devices, including biosensors.},
      cin          = {IBI-3},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)IBI-3-20200312},
      pnm          = {5241 - Molecular Information Processing in Cellular Systems
                      (POF4-524)},
      pid          = {G:(DE-HGF)POF4-5241},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001194156600001},
      doi          = {10.1002/aelm.202300855},
      url          = {https://juser.fz-juelich.de/record/1024571},
}