Hauptseite > Publikationsdatenbank > Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors > print

001     1024571
005     20250204113823.0
024 7 _ |a 10.1002/aelm.202300855
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100 1 _ |a Zhang, Yongqiang
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245 _ _ |a Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
260 _ _ |a Weinheim
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520 _ _ |a High-quality liquid gate-all-around (LGAA) silicon nanowire (NW) field-effect transistor (FET) biosensors are fabricated and studied their properties in 1 mM phosphate-buffered saline solution with pH = 7.4 using transport and noise spectroscopy. At small VDS, the conventional current behavior of FET with a linear dependence on voltage is registered in the output current-voltage (I-VM) characteristics with M=1. At drain-source voltage VDS > 0.6 V, the I-V characteristics with stronger power M are revealed. It is shown that the current in LGAA NW FETs follows current proportional to voltage in power M = 4 dependence on small liquid gate voltages. Transport and noise spectroscopy analyses demonstrate that the obtained results are associated with the space-charge-limited current (SCLC) effect. Moreover, a strong two-level random telegraph signal (RTS) is found in the region corresponding to SCLC at VDS values exceeding 0.6 V. The RTS related to single trap phenomena results in a well-resolved Lorentzian component of noise spectra. The results demonstrate that the SCLC and two-level RTS phenomenon are correlated effects. They should be taken into account during the development of single-trap-based devices, including biosensors.
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700 1 _ |a Boichuk, Nazarii
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700 1 _ |a Pustovyi, Denys
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700 1 _ |a Chekubasheva, Valeriia
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700 1 _ |a Long, Hanlin
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700 1 _ |a Petrychuk, Mykhailo
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700 1 _ |a Vitusevich, Svetlana
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773 _ _ |a 10.1002/aelm.202300855
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