Contribution to a conference proceedings

FZJ-2024-02271

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of the switching mode on the read noise of ReRAM devices

Schnieders, K.FZJ* ; Aussen, S.FZJ* ; Cüppers, F.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Wiefels, S.FZJ*

2023
ACM New York, NY, USA

This record in other databases:  

Please use a persistent id in citations: doi:10.1145/3611315.3633248

---

Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

Appears in the scientific report 2024

---