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@ARTICLE{Frauenrath:1024786,
      author       = {Frauenrath, M. and Acosta Alba, P. and Concepción Díaz,
                      Omar and Bae, J.-H. and Gauthier, N. and Nolot, E. and
                      Veillerot, M. and Bernier, N. and Buca, D. and Hartmann,
                      J.-M.},
      title        = {{N}anosecond laser annealing of pseudomorphic {G}e{S}n
                      layers: {I}mpact of {S}n content},
      journal      = {Materials science in semiconductor processing},
      volume       = {163},
      issn         = {1369-8001},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2024-02452},
      pages        = {107549 -},
      year         = {2023},
      abstract     = {Interactions between nanosecond laser pulses and various Sn
                      content pseudomorphic GeSn layers were investigated. The aim
                      was to evaluate the suitability of Ultraviolet Nanosecond
                      Laser Annealing (UV-NLA), with an excimer laser emitting at
                      308 nm and a pulse duration of 160 ns, for the fabrication
                      of performant contacts in GeSn devices such as electrically
                      pumped lasers. Atomic Force Microscopy (AFM) and X-Ray
                      Diffraction (XRD) revealed similar melt regimes for GeSn on
                      Ge and SiGe on Si. At the melt threshold, surface structures
                      formed where small areas melted. We were then in the
                      so-called surface melt regime. The surface structures’
                      shape changed with the Sn content. A similar trend was
                      recently evidenced when submitting SiGe layers on Si to
                      UV-NLA. The shape change was more drastic in GeSn than in
                      SiGe. A larger built-in compressive strain because of a much
                      larger size difference between Ge and Sn than Si and Ge
                      might be the reason why. Time Resolved Reflectivity maps
                      showed a more reflective plateau after the melt peak at an
                      Energy Density (ED) of around 1.00 Jcm−2, stemming from
                      the presence of a smooth Sn rich surface layer, as revealed
                      by AFM images at the same ED. Stacked XRD maps outlined that
                      this ED corresponded to the formation of rather high Sn
                      content layers with Sn contents of up to $6.3\%,$ i.e.,
                      concentrations significantly above the solid solubility
                      limit, which is below $1\%,$ at variance with conventional
                      annealing processes at 450 °C. UV-NLA has thus opened a new
                      processing window that might be useful for contact
                      formation.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000999874100001},
      doi          = {10.1016/j.mssp.2023.107549},
      url          = {https://juser.fz-juelich.de/record/1024786},
}