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@ARTICLE{Reboud:1024790,
      author       = {Reboud, V. and Concepción Díaz, Omar and Du, W. and El
                      Kurdi, M. and Hartmann, J. M. and Ikonic, Z. and Assali, S.
                      and Pauc, N. and Calvo, V. and Cardoux, C. and Kroemer, E.
                      and Coudurier, N. and Rodriguez, P. and Yu, S.-Q. and Buca,
                      D. and Chelnokov, A.},
      title        = {{A}dvances in {G}e{S}n alloys for {MIR} applications},
      journal      = {Photonics and nanostructures},
      volume       = {58},
      issn         = {1569-4410},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {FZJ-2024-02456},
      pages        = {101233 -},
      year         = {2024},
      abstract     = {Silicon photonics is widely used for near InfraRed (IR)
                      applications up to 1.6 µm. It plays a key role in
                      short-range optical data communications. However, silicon
                      photonics does not really address mid-IR applications,
                      particularly in the 1.6–5 µm wavelength range. This
                      spectral region is essential for environmental/life sensing
                      and safety applications relying on the optical features of
                      molecular vibrations, the aim being to discern and
                      categorize complex chemical entities. Growing markets for
                      such analysis prioritise sensitivity, specificity,
                      compactness, energy-efficient operation and cost
                      effectiveness. The need for a CMOS-compatible integrated
                      photonic platform for the mid-IR is obvious. Such
                      fully-group-IV semiconductor platform should include
                      low-loss guided interconnects, detectors, modulators and,
                      critically, efficient integrated light sources. This paper
                      provides a comprehensive review of recent advances in
                      GeSn-based mid-IR silicon-compatible devices, including
                      optically and electrically pumped lasers, light-emitting
                      diodes and photodetectors. It also discusses the principles
                      underlying these developments, with focuses on material
                      growth techniques and processing methods.},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001205815400001},
      doi          = {10.1016/j.photonics.2024.101233},
      url          = {https://juser.fz-juelich.de/record/1024790},
}