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@ARTICLE{Lv:1024841,
      author       = {Lv, Hua and da Silva, Alessandra and Figueroa, Adriana I.
                      and Guillemard, Charles and Aguirre, Iván Fernández and
                      Camosi, Lorenzo and Aballe, Lucia and Valvidares, Manuel and
                      Valenzuela, Sergio O. and Schubert, Jürgen and Schmidbauer,
                      Martin and Herfort, Jens and Hanke, Michael and Trampert,
                      Achim and Engel-Herbert, Roman and Ramsteiner, Manfred and
                      Lopes, Joao Marcelo J.},
      title        = {{L}arge‐{A}rea {S}ynthesis of {F}erromagnetic {F}e 5− x
                      {G}e{T}e 2 /{G}raphene van der {W}aals {H}eterostructures
                      with {C}urie {T}emperature above {R}oom {T}emperature},
      journal      = {Small},
      volume       = {19},
      number       = {39},
      issn         = {1613-6810},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2024-02507},
      pages        = {2302387},
      year         = {2023},
      abstract     = {Van der Waals (vdW) heterostructures combining layered
                      ferromagnets and other 2D crystals are promising building
                      blocks for the realization of ultracompact devices with
                      integrated magnetic, electronic, and optical
                      functionalities. Their implementation in various
                      technologies depends strongly on the development of a
                      bottom-up scalable synthesis approach allowing for realizing
                      highly uniform heterostructures with well-defined interfaces
                      between different 2D-layered materials. It is also required
                      that each material component of the heterostructure remains
                      functional, which ideally includes ferromagnetic order above
                      room temperature for 2D ferromagnets. Here, it is
                      demonstrated that the large-area growth of
                      Fe5−xGeTe2/graphene heterostructures is achieved by vdW
                      epitaxy of Fe5−xGeTe2 on epitaxial graphene. Structural
                      characterization confirms the realization of a continuous
                      vdW heterostructure film with a sharp interface between
                      Fe5−xGeTe2 and graphene. Magnetic and transport studies
                      reveal that the ferromagnetic order persists well above 300
                      K with a perpendicular magnetic anisotropy. In addition,
                      epitaxial graphene on SiC(0001) continues to exhibit a high
                      electronic quality. These results represent an important
                      advance beyond nonscalable flake exfoliation and stacking
                      methods, thus marking a crucial step toward the
                      implementation of ferromagnetic 2D materials in practical
                      applications.},
      cin          = {INM-7 / PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)INM-7-20090406 / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5254 - Neuroscientific Data Analytics and AI (POF4-525)},
      pid          = {G:(DE-HGF)POF4-5254},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {37231567},
      UT           = {WOS:000994675900001},
      doi          = {10.1002/smll.202302387},
      url          = {https://juser.fz-juelich.de/record/1024841},
}