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@INPROCEEDINGS{Bittkau:1025054,
      author       = {Bittkau, Karsten and Gebrewold, Habtamu Tsegaye and Qiu,
                      Kaifu and Rau, Uwe and Ding, Kaining},
      title        = {{N}umerical {O}ptimization of nc-{S}i{C}/{S}i{O}2 {B}ased
                      {T}ransparent {P}assivating {C}ontacts in {S}ilicon
                      {H}eterojunction {S}olar {C}ells},
      reportid     = {FZJ-2024-02642},
      year         = {2023},
      abstract     = {Silicon heterojunction (SHJ) solar cells that incorporate
                      transparent passivating contact (TPC), based on
                      nc-SiC:H/SiO2 layer stack, at the front side are currently
                      under investigation due to their combination of
                      transparency, passivation quality, and conductivity. In this
                      work, the potential performance of those TPC solar cells is
                      modeled and investigated. We coupled the finite-element
                      method-based electro-optical device simulator Sentaurus TCAD
                      to a genetic algorithm approach implemented in Python to
                      optimize the thicknesses of the front layer stack. Starting
                      with a configuration that previously showed in experiment an
                      efficiency of $23.8\%$ and short-circuit current density of
                      40.9 mA/cm², the optimization of front layer thickness
                      results in $24.1\%$ efficiency.Moreover, we used the
                      Sentaurus TCAD simulations to further improve the device
                      performance by varying the dopant concentration at the
                      rear-side a-Si:H(p) layer and the rear ITO layer. There, an
                      improved carrier extraction could be shown with an
                      efficiency potential beyond $25\%.A$ detailed analysis will
                      be shown, highlighting the importance of band alignment and
                      the role of defect and band tail states on charge carrier
                      extraction and passivation quality in the TPC-based SHJ
                      solar cells.},
      month         = {Sep},
      date          = {2023-09-18},
      organization  = {EU PVSEC, Lisbon (Portugal), 18 Sep
                       2023 - 22 Sep 2023},
      subtyp        = {Other},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121) / 1215 -
                      Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213 / G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)6},
      doi          = {10.34734/FZJ-2024-02642},
      url          = {https://juser.fz-juelich.de/record/1025054},
}