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@ARTICLE{Ascoli:1025096,
      author       = {Ascoli, Alon and Schmitt, Nicolas and Messaris, Ioannis and
                      Demirkol, Ahmet Samil and Strachan, John Paul and Tetzlaff,
                      Ronald and Chua, Leon},
      title        = {{A}n analytical approach to engineer multistability in the
                      oscillatory response of a pulse-driven {R}e{RAM}},
      journal      = {Scientific reports},
      volume       = {14},
      number       = {1},
      issn         = {2045-2322},
      address      = {[London]},
      publisher    = {Macmillan Publishers Limited, part of Springer Nature},
      reportid     = {FZJ-2024-02683},
      pages        = {5626},
      year         = {2024},
      abstract     = {A nonlinear system, exhibiting a unique asymptotic
                      behaviour, while being continuously subject to a stimulus
                      from a certain class, is said to suffer from fading memory.
                      This interesting phenomenon was first uncovered in a
                      non-volatile tantalum oxide-based memristor from Hewlett
                      Packard Labs back in 2016 out of a deep numerical
                      investigation of a predictive mathematical description,
                      known as the Strachan model, later corroborated by
                      experimental validation. It was then found out that fading
                      memory is ubiquitous in non-volatile resistance switching
                      memories. A nonlinear system may however also exhibit a
                      local form of fading memory, in case, under an excitation
                      from a given family, it may approach one of a number of
                      distinct attractors, depending upon the initial condition. A
                      recent bifurcation study of the Strachan model revealed how,
                      under specific train stimuli, composed of two square pulses
                      of opposite polarity per cycle, the simplest form of local
                      fading memory affects the transient dynamics of the
                      aforementioned Resistive Random Access Memory cell, which,
                      would asymptotically act as a bistable oscillator. In this
                      manuscript we propose an analytical methodology, based on
                      the application of analysis tools from Nonlinear System
                      Theory to the Strachan model, to craft the properties of a
                      generalised pulse train stimulus in such a way to induce the
                      emergence of complex local fading memory effects in the
                      nano-device, which would consequently display an interesting
                      tuneable multistable oscillatory response, around desired
                      resistance states. The last part of the manuscript discusses
                      a case study, shedding light on a potential application of
                      the local history erase effects, induced in the device via
                      pulse train stimulation, for compensating the unwanted yet
                      unavoidable drifts in its resistance state under power off
                      conditions.},
      cin          = {PGI-14},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-14-20210412},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / 5232 -
                      Computational Principles (POF4-523) / 5233 - Memristive
                      Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(DE-HGF)POF4-5232 /
                      G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {38454014},
      UT           = {WOS:001185083700017},
      doi          = {10.1038/s41598-024-55255-7},
      url          = {https://juser.fz-juelich.de/record/1025096},
}