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@ARTICLE{Ascoli:1025096,
author = {Ascoli, Alon and Schmitt, Nicolas and Messaris, Ioannis and
Demirkol, Ahmet Samil and Strachan, John Paul and Tetzlaff,
Ronald and Chua, Leon},
title = {{A}n analytical approach to engineer multistability in the
oscillatory response of a pulse-driven {R}e{RAM}},
journal = {Scientific reports},
volume = {14},
number = {1},
issn = {2045-2322},
address = {[London]},
publisher = {Macmillan Publishers Limited, part of Springer Nature},
reportid = {FZJ-2024-02683},
pages = {5626},
year = {2024},
abstract = {A nonlinear system, exhibiting a unique asymptotic
behaviour, while being continuously subject to a stimulus
from a certain class, is said to suffer from fading memory.
This interesting phenomenon was first uncovered in a
non-volatile tantalum oxide-based memristor from Hewlett
Packard Labs back in 2016 out of a deep numerical
investigation of a predictive mathematical description,
known as the Strachan model, later corroborated by
experimental validation. It was then found out that fading
memory is ubiquitous in non-volatile resistance switching
memories. A nonlinear system may however also exhibit a
local form of fading memory, in case, under an excitation
from a given family, it may approach one of a number of
distinct attractors, depending upon the initial condition. A
recent bifurcation study of the Strachan model revealed how,
under specific train stimuli, composed of two square pulses
of opposite polarity per cycle, the simplest form of local
fading memory affects the transient dynamics of the
aforementioned Resistive Random Access Memory cell, which,
would asymptotically act as a bistable oscillator. In this
manuscript we propose an analytical methodology, based on
the application of analysis tools from Nonlinear System
Theory to the Strachan model, to craft the properties of a
generalised pulse train stimulus in such a way to induce the
emergence of complex local fading memory effects in the
nano-device, which would consequently display an interesting
tuneable multistable oscillatory response, around desired
resistance states. The last part of the manuscript discusses
a case study, shedding light on a potential application of
the local history erase effects, induced in the device via
pulse train stimulation, for compensating the unwanted yet
unavoidable drifts in its resistance state under power off
conditions.},
cin = {PGI-14},
ddc = {600},
cid = {I:(DE-Juel1)PGI-14-20210412},
pnm = {5234 - Emerging NC Architectures (POF4-523) / 5232 -
Computational Principles (POF4-523) / 5233 - Memristive
Materials and Devices (POF4-523)},
pid = {G:(DE-HGF)POF4-5234 / G:(DE-HGF)POF4-5232 /
G:(DE-HGF)POF4-5233},
typ = {PUB:(DE-HGF)16},
pubmed = {38454014},
UT = {WOS:001185083700017},
doi = {10.1038/s41598-024-55255-7},
url = {https://juser.fz-juelich.de/record/1025096},
}