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@ARTICLE{Wellmann:1025203,
      author       = {Wellmann, Peter and Strüber, Sven and Steiner, Johannes
                      and Ihle, Jonas and Schultheiss, Jana and Nguyen, Binh Duong
                      and Sandfeld, Stefan and Salamon, Michael and Uhlmann,
                      Norman},
      title        = {({I}nvited) {A}pplication of 3{D} in-{S}itu {X}-{R}ay
                      {V}isualization to {T}rack the {F}ormation of {D}islocation
                      {C}lusters during {PVT} {G}rowth of {S}i{C}},
      journal      = {Meeting abstracts},
      volume       = {MA2023-02},
      number       = {35},
      issn         = {1091-8213},
      address      = {Pennington, NJ},
      publisher    = {Soc.},
      reportid     = {FZJ-2024-02771},
      pages        = {1693 - 1693},
      year         = {2023},
      abstract     = {SiC has become the key player among wide bandgap
                      semiconductors for power electronic applications. Since the
                      first description of the physical vapour transport (PVT)
                      growth process of SiC by Tairov and Tsvetkov (J. Crystal
                      Growth, 43, 209(1978)), there has been steady progress in
                      SiC-based crystal growth, epitaxy and device processing. The
                      success of SiC compared to Si is related to its superior
                      material properties such as extremely high electrical
                      breakdown field and high thermal conductivity compared to
                      the standard silicon counterpart. In addition, SiC device
                      processing utilises much of the standard Si processing
                      equipment. A major reason for the success of SiC in power
                      electronic applications compared to other wide bandgap
                      counterparts such as GaN, Ga2O3 and diamond is related to
                      the availability of large diameter SiC wafer materials
                      (150mm = standard, 200mm = developped). Bulk SiC growth is
                      now a very well developed process with comparatively high
                      yields. The extraordinary physical properties also include
                      obstacles related to the strong chemical bonding and complex
                      phase diagram of the material, which pose challenges to the
                      growth process. Therefore, there are still a number of open
                      questions related to the nucleation, progression and
                      termination of the bulk growth process that require
                      fundamental research in materials science and technology.The
                      aim of this presentation is (i) to give an overview of the
                      state-of-the-art PVT growth process and (ii) to discuss a
                      current research topic dealing with the early stage of the
                      growth process and the defect formation that can occur
                      during the initial nucleation of SiC. We have applied 3D
                      in-situ visualisation of the growth process using X-ray
                      computed tomography to visualise island formation on the
                      large seeding area. These data are related to growth process
                      instabilities such as temperature variations during the
                      seeding process and axial doping level changes from the seed
                      to the newly grown crystal. Both process instabilities
                      induce mechanical stress on the SiC lattice and act as
                      sources for dislocation generation and multiplication. We
                      will show a series of growth processes with varying growth
                      parameters that shed light on the initial growth stage of
                      SiC.As the crystal diameter of SiC increases from 150 mm to
                      200 mm, the results of this study become increasingly
                      important.},
      cin          = {IAS-9},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IAS-9-20201008},
      pnm          = {5111 - Domain-Specific Simulation $\&$ Data Life Cycle Labs
                      (SDLs) and Research Groups (POF4-511)},
      pid          = {G:(DE-HGF)POF4-5111},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1149/MA2023-02351693mtgabs},
      url          = {https://juser.fz-juelich.de/record/1025203},
}