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@ARTICLE{Chen:1025370,
      author       = {Chen, Ching-Jung and Rushchanskii, Konstantin Z. and
                      Jungemann, Christoph},
      title        = {{I}nvestigation of the {L}arge {V}ariability of {H}f{O} 2
                      ‐{B}ased {R}esistive {R}andom {A}ccess {M}emory {D}evices
                      with a {S}mall {C}urrent {C}ompliance by a {K}inetic {M}onte
                      {C}arlo {M}odel},
      journal      = {Physica status solidi / A},
      volume       = {221},
      number       = {22},
      issn         = {1862-6300},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2024-02833},
      pages        = {2300403},
      year         = {2024},
      abstract     = {While scaling down resistive random access memory devices
                      can bring many benefits, it also introduces uncertainties
                      during operation. One example is the wide distribution of
                      the resistances in the low-resistance state (LRS) when the
                      device is connected by a small current compliance () in the
                      microampere range. During the operation under such small ,
                      it is believed that the stochastic migration of oxygen
                      vacancies in the oxide layer plays an important role for the
                      variability. To this regard, the model where oxygen
                      vacancies are treated as point defects and the kinetic Monte
                      Carlo method is applied for the stochastic migration of
                      vacancies is extended. The relation between the macroscopic
                      observations in measurements and the microscopic vacancy
                      distribution are discussed. It turns out that three
                      representative configurations are sufficient to describe the
                      vacancy distribution in the LRS. The large spread of the
                      resistance seen in the cycle-to-cycle statistics is then due
                      to the change from one of the configuration to the other.
                      The origin for the change between configurations is
                      discussed in terms of the anisotropic zero-field energy
                      barrier of the diffusion of vacancies.},
      cin          = {PGI-1 / IAS-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)IAS-1-20090406},
      pnm          = {5211 - Topological Matter (POF4-521) / SFB 917 B08 -
                      Theorie und Modellierung des valenzwechselbasierenden
                      resistiven Schaltens (B08) (277688301)},
      pid          = {G:(DE-HGF)POF4-5211 / G:(GEPRIS)277688301},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001116460800001},
      doi          = {10.1002/pssa.202300403},
      url          = {https://juser.fz-juelich.de/record/1025370},
}