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@ARTICLE{Zhang:1025374,
      author       = {Zhang, Lishu and Li, Hui and Jiang, Yanyan and Wang, Zishen
                      and Li, Tao and Ghosh, Sumit},
      title        = {{C}urrent-driven magnetoresistance in van der {W}aals
                      spin-filter antiferromagnetic tunnel junctions with {M}n
                      {B}i 2 {T}e 4},
      journal      = {Physical review applied},
      volume       = {20},
      number       = {4},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2024-02837},
      pages        = {044056},
      year         = {2023},
      abstract     = {The field of two-dimensional magnetic materials has paved
                      the way for the development of spintronics and nanodevices
                      with other functionalities. Utilizing antiferromagnetic
                      materials, in addition to layered van der Waals (vdW)
                      ferromagnetic materials, has garnered significant interest.
                      In this work, we present a theoretical investigation of the
                      behavior of MnBi2Te4 devices based on the nonequilibrium
                      Green’s function method. Our results show that the
                      current-voltage (I-V) characteristics can be influenced
                      significantly by controlling the length of the device and
                      bias voltage and thus allow us to manipulate the tunneling
                      magnetoresistance (TMR) with an external bias voltage. This
                      can be further influenced by the presence of the boron
                      nitride layer, which shows significantly enhanced TMR by
                      selectively suppressing specific spin channels for different
                      magnetic configurations. By exploiting this mechanism, the
                      observed TMR value reaches up to $3690\%,$ which can be
                      attributed to the spin-polarized transmission channel and
                      the projected local density of states. Our findings on the
                      influence of structural and magnetic configurations on the
                      spin-polarized transport properties and TMR ratios give the
                      potential implementation of antiferromagnetic vdW layered
                      materials in ultrathin spintronics.},
      cin          = {PGI-1 / IAS-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)IAS-1-20090406},
      pnm          = {5211 - Topological Matter (POF4-521)},
      pid          = {G:(DE-HGF)POF4-5211},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001446050200001},
      doi          = {10.1103/PhysRevApplied.20.044056},
      url          = {https://juser.fz-juelich.de/record/1025374},
}