%0 Journal Article
%A Vaquero, Daniel
%A Clericò, Vito
%A Schmitz, Michael
%A Delgado-Notario, Juan Antonio
%A Martín-Ramos, Adrian
%A Salvador-Sánchez, Juan
%A Müller, Claudius S. A.
%A Rubi, Km
%A Watanabe, Kenji
%A Taniguchi, Takashi
%A Beschoten, Bernd
%A Stampfer, Christoph
%A Diez, Enrique
%A Katsnelson, Mikhail I.
%A Zeitler, Uli
%A Wiedmann, Steffen
%A Pezzini, Sergio
%T Phonon-mediated room-temperature quantum Hall transport in graphene
%J Nature Communications
%V 14
%N 1
%@ 2041-1723
%C [London]
%I Nature Publishing Group UK
%M FZJ-2024-03006
%P 318
%D 2023
%X The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ 36658139
%U <Go to ISI:>//WOS:000982581400030
%R 10.1038/s41467-023-35986-3
%U https://juser.fz-juelich.de/record/1025617