TY  - JOUR
AU  - Vaquero, Daniel
AU  - Clericò, Vito
AU  - Schmitz, Michael
AU  - Delgado-Notario, Juan Antonio
AU  - Martín-Ramos, Adrian
AU  - Salvador-Sánchez, Juan
AU  - Müller, Claudius S. A.
AU  - Rubi, Km
AU  - Watanabe, Kenji
AU  - Taniguchi, Takashi
AU  - Beschoten, Bernd
AU  - Stampfer, Christoph
AU  - Diez, Enrique
AU  - Katsnelson, Mikhail I.
AU  - Zeitler, Uli
AU  - Wiedmann, Steffen
AU  - Pezzini, Sergio
TI  - Phonon-mediated room-temperature quantum Hall transport in graphene
JO  - Nature Communications
VL  - 14
IS  - 1
SN  - 2041-1723
CY  - [London]
PB  - Nature Publishing Group UK
M1  - FZJ-2024-03006
SP  - 318
PY  - 2023
AB  - The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm.
LB  - PUB:(DE-HGF)16
C6  - 36658139
UR  - <Go to ISI:>//WOS:000982581400030
DO  - DOI:10.1038/s41467-023-35986-3
UR  - https://juser.fz-juelich.de/record/1025617
ER  -