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@ARTICLE{Vaquero:1025617,
      author       = {Vaquero, Daniel and Clericò, Vito and Schmitz, Michael and
                      Delgado-Notario, Juan Antonio and Martín-Ramos, Adrian and
                      Salvador-Sánchez, Juan and Müller, Claudius S. A. and
                      Rubi, Km and Watanabe, Kenji and Taniguchi, Takashi and
                      Beschoten, Bernd and Stampfer, Christoph and Diez, Enrique
                      and Katsnelson, Mikhail I. and Zeitler, Uli and Wiedmann,
                      Steffen and Pezzini, Sergio},
      title        = {{P}honon-mediated room-temperature quantum {H}all transport
                      in graphene},
      journal      = {Nature Communications},
      volume       = {14},
      number       = {1},
      issn         = {2041-1723},
      address      = {[London]},
      publisher    = {Nature Publishing Group UK},
      reportid     = {FZJ-2024-03006},
      pages        = {318},
      year         = {2023},
      abstract     = {The quantum Hall (QH) effect in two-dimensional electron
                      systems (2DESs) is conventionally observed at liquid-helium
                      temperatures, where lattice vibrations are strongly
                      suppressed and bulk carrier scattering is dominated by
                      disorder. However, due to large Landau level (LL) separation
                      (~2000 K at B = 30 T), graphene can support the QH
                      effect up to room temperature (RT), concomitant with a
                      non-negligible population of acoustic phonons with a
                      wave-vector commensurate to the inverse electronic magnetic
                      length. Here, we demonstrate that graphene encapsulated in
                      hexagonal boron nitride (hBN) realizes a novel transport
                      regime, where dissipation in the QH phase is governed
                      predominantly by electron-phonon scattering. Investigating
                      thermally-activated transport at filling factor 2 up to RT
                      in an ensemble of back-gated devices, we show that the high
                      B-field behaviour correlates with their zero B-field
                      transport mobility. By this means, we extend the
                      well-accepted notion of phonon-limited resistivity in
                      ultra-clean graphene to a hitherto unexplored high-field
                      realm.},
      cin          = {PGI-9},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5222 - Exploratory Qubits (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5222},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {36658139},
      UT           = {WOS:000982581400030},
      doi          = {10.1038/s41467-023-35986-3},
      url          = {https://juser.fz-juelich.de/record/1025617},
}