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@ARTICLE{Sonntag:1025618,
      author       = {Sonntag, J. and Watanabe, K. and Taniguchi, T. and
                      Beschoten, B. and Stampfer, C.},
      title        = {{C}harge carrier density dependent {R}aman spectra of
                      graphene encapsulated in hexagonal boron nitride},
      journal      = {Physical review / B},
      volume       = {107},
      number       = {7},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2024-03007},
      pages        = {075420},
      year         = {2023},
      abstract     = {We present low-temperature Raman measurements on
                      gate-tunable graphene encapsulated in hexagonal boron
                      nitride, which allows us to study in detail the Raman G and
                      2D mode frequencies and linewidths as a function of the
                      charge carrier density. We observe a clear softening of the
                      Raman G mode (of up to 2.5 cm−1) at low carrier density
                      due to the phonon anomaly and a residual G mode linewidth of
                      ≈3.5cm−1 at high doping. By analyzing the G mode
                      dependence on doping and laser power we extract an
                      electron-phonon-coupling constant of ≈4.4×10−3 (for the
                      G mode phonon). The ultraflat nature of encapsulated
                      graphene results in a minimum Raman 2D peak linewidth of
                      14.5 cm−1 and allows us to observe intrinsic
                      electron-electron scattering-induced broadening of the 2D
                      peak of up to 18 cm−1 for an electron density of
                      5×1012cm−2 (laser excitation energy of 2.33 eV). Our
                      findings not only provide insights into electron-phonon
                      coupling and the role of electron-electron scattering in the
                      broadening of the 2D peak but also crucially show the
                      limitations when it comes to the use of Raman spectroscopy
                      (i.e., the use of the frequencies and the linewidths of the
                      G and 2D modes) to benchmark graphene in terms of charge
                      carrier density, strain, and strain inhomogeneities. This is
                      particularly relevant when utilizing spatially resolved 2D
                      Raman linewidth maps to assess substrate-induced
                      nanometer-scale strain variations.},
      cin          = {PGI-9 / PGI-11},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-11-20170113},
      pnm          = {5221 - Advanced Solid-State Qubits and Qubit Systems
                      (POF4-522) / 5222 - Exploratory Qubits (POF4-522) /
                      GrapheneCore3 - Graphene Flagship Core Project 3 (881603) /
                      2D4QT - 2D Materials for Quantum Technology (820254) / DFG
                      project 437214324 - Durchstimmbare Twistronics: Lokales
                      Tuning und lokale Detektion topologischer Randzustände und
                      Supraleitung in Zweilagigen-Graphen (437214324) / DFG
                      project 436607160 - NEMS Sensoren aus
                      2D-Material-Heterostrukturen (436607160) / DFG project
                      390534769 - EXC 2004: Materie und Licht für
                      Quanteninformation (ML4Q) (390534769)},
      pid          = {G:(DE-HGF)POF4-5221 / G:(DE-HGF)POF4-5222 /
                      G:(EU-Grant)881603 / G:(EU-Grant)820254 /
                      G:(GEPRIS)437214324 / G:(GEPRIS)436607160 /
                      G:(GEPRIS)390534769},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000933970900003},
      doi          = {10.1103/PhysRevB.107.075420},
      url          = {https://juser.fz-juelich.de/record/1025618},
}