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| 001 | 1026302 | ||
| 005 | 20240709081954.0 | ||
| 037 | _ | _ | |a FZJ-2024-03373 |
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| 100 | 1 | _ | |a Stern, Christian |0 P:(DE-Juel1)190289 |b 0 |e Corresponding author |u fzj |
| 111 | 2 | _ | |a 48th International Conference and Expo on Advanced Ceramics and Composites |g ICACC2024 |c Daytona Beach |d 2024-01-28 - 2024-02-02 |w USA |
| 245 | _ | _ | |a Reactive spark plasma sintering of ceramics with garnet structure for plasma etching applications |
| 260 | _ | _ | |c 2024 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
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| 520 | _ | _ | |a Yttrium-Aluminum-Garnet (YAG) is an advanced structural ceramic that has desirable properties for halogen plasma etching chambers used in semiconductor processing. The trend towards more aggressive etching environments requires new material systems with enhanced plasma resistance. To tackle this issue, there is an increasing interest in understanding the specific erosion mechanisms of etch-resistant ceramics. In this study, we present a novel approach to manufacture highly dense ceramics with garnet structure by means of reactive spark plasma sintering of the respective oxides. Targeting on improved plasma resistance compared to YAG, Y was completely replaced by lanthanides (Lu, Yb, Er) enabling us to clarify the role of these lanthanides in the YAG-type structure on the plasma-material interaction. For characterization, all samples were exposed to fluorine-based etching plasmas (CF4/O2/Ar) using an inductively coupled plasma (ICP) etch chamber. The resulting topography was characterized by atomic force microscopy (AFM). Under the given conditions, no physical erosion could be detected and the formation of a reaction layer was the dominating phenomenon. The induced chemical gradient has been analyzed by means of SIMS and STEM. Our results reveal the reaction layer is significantly altered if Y is replaced by lanthanides, which provides a route to study mechanisms of the plasma corrosion process. |
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| 700 | 1 | _ | |a Schwab, Christian |0 P:(DE-Juel1)194161 |b 1 |
| 700 | 1 | _ | |a Kindelmann, Moritz |0 P:(DE-Juel1)174079 |b 2 |
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