% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Concepcin:1026692,
      author       = {Concepción, Omar and Tiscareño-Ramírez, Jhonny and
                      Chimienti, Ada Angela and Classen, Thomas and Corley-Wiciak,
                      Agnieszka Anna and Tomadin, Andrea and Spirito, Davide and
                      Pisignano, Dario and Graziosi, Patrizio and Ikonic, Zoran
                      and Zhao, Qing Tai and Grützmacher, Detlev and Capellini,
                      Giovanni and Roddaro, Stefano and Virgilio, Michele and
                      Buca, Dan},
      title        = {{R}oom {T}emperature {L}attice {T}hermal {C}onductivity of
                      {G}e{S}n {A}lloys},
      journal      = {ACS applied energy materials},
      volume       = {7},
      number       = {10},
      issn         = {2574-0962},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2024-03506},
      pages        = {4394 - 4401},
      year         = {2024},
      abstract     = {CMOS-compatible materials for efficient energy harvesters
                      at temperatures characteristic for on-chip operation and
                      body temperature are the key ingredients for sustainable
                      green computing and ultralow power Internet of Things
                      applications. In this context, the lattice thermal
                      conductivity (κ) of new group IV semiconductors, namely
                      Ge1–xSnx alloys, are investigated. Layers featuring Sn
                      contents up to 14 $at.\%$ are epitaxially grown by
                      state-of-the-art chemical-vapor deposition on Ge buffered Si
                      wafers. An abrupt decrease of the lattice thermal
                      conductivity (κ) from 55 W/(m·K) for Ge to 4 W/(m·K) for
                      Ge0.88Sn0.12 alloys is measured electrically by the
                      differential 3ω-method. The thermal conductivity was
                      verified to be independent of the layer thickness for
                      strained relaxed alloys and confirms the Sn dependence
                      observed by optical methods previously. The experimental κ
                      values in conjunction with numerical estimations of the
                      charge transport properties, able to capture the complex
                      physics of this quasi-direct bandgap material system, are
                      used to evaluate the thermoelectric figure of merit ZT for
                      n- and p-type GeSn epitaxial layers. The results highlight
                      the high potential of single-crystal GeSn alloys to achieve
                      similar energy harvest capability as already present in SiGe
                      alloys but in the 20 °C–100 °C temperature range where
                      Si-compatible semiconductors are not available. This opens
                      the possibility of monolithically integrated thermoelectric
                      on the CMOS platform.},
      cin          = {PGI-9},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {38817849},
      UT           = {WOS:001226106500001},
      doi          = {10.1021/acsaem.4c00275},
      url          = {https://juser.fz-juelich.de/record/1026692},
}