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@INPROCEEDINGS{Yu:1028664,
      author       = {Yu, Jiaao and Manea, Paul and Ameli Kalkhouran, Sara and
                      Hizzani, Mohammad and Eldebiky, Amro and Strachan, John
                      Paul},
      title        = {{A}nalog {F}eedback-{C}ontrolled {M}emristor {P}rogramming
                      {C}ircuit for {A}nalog {C}ontent {A}ddressable {M}emory},
      volume       = {6},
      publisher    = {IEEE},
      reportid     = {FZJ-2024-04731},
      pages        = {983-988},
      year         = {2023},
      abstract     = {Recent breakthroughs in associative memories suggest that
                      silicon memories are coming closer to human memories,
                      especially for memristive Content Addressable Memories
                      (CAMs) which are capable to read and write in analog values.
                      However, the Program-Verify algorithm, the state-of-the-art
                      memristor programming algorithm, requires frequent switching
                      between verifying and programming memristor conductance,
                      which brings many defects such as high dynamic power and
                      long programming time. Here, we propose an analog
                      feedback-controlled memristor programming circuit that makes
                      use of a novel look-up table-based (LUT-based) programming
                      algorithm. With the proposed algorithm, the programming and
                      the verification of a memristor can be performed in a
                      single-direction sequential process. Besides, we also
                      integrated a single proposed programming circuit with eight
                      analog CAM (aCAM) cells to build an aCAM array. We present
                      SPICE simulations on TSMC 28nm process. The theoretical
                      analysis shows that 1. A memristor conductance within an
                      aCAM cell can be converted to an output boundary voltage in
                      aCAM searching operations and 2. An output boundary voltage
                      in aCAM searching operations can be converted to a
                      programming data line voltage in aCAM programming
                      operations. The simulation results of the proposed
                      programming circuit prove the theoretical analysis and thus
                      verify the feasibility to program memristors without
                      frequently switching between verifying and programming the
                      conductance. Besides, the simulation results of the proposed
                      aCAM array show that the proposed programming circuit can be
                      integrated into a large array architecture.},
      month         = {Oct},
      date          = {2023-10-25},
      organization  = {2023 IEEE International Conference on
                       Metrology for eXtended Reality,
                       Artificial Intelligence and Neural
                       Engineering (MetroXRAINE), Milano
                       (Italy), 25 Oct 2023 - 27 Oct 2023},
      cin          = {PGI-14},
      cid          = {I:(DE-Juel1)PGI-14-20210412},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / 5233 -
                      Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/MetroXRAINE58569.2023.10405732},
      url          = {https://juser.fz-juelich.de/record/1028664},
}