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@ARTICLE{Stern:1028934,
      author       = {Stern, Christian and Schwab, Christian and Kindelmann,
                      Moritz and Stamminger, Mark and Weirich, Thomas and Park,
                      Inhee and Hausen, Florian and Finsterbusch, Martin and Bram,
                      Martin and Guillon, Olivier},
      title        = {{C}orrelative characterization of plasma etching resistance
                      of various aluminum garnets},
      journal      = {Journal of the American Ceramic Society},
      volume       = {107},
      number       = {11},
      issn         = {0002-7820},
      address      = {Westerville, Ohio},
      publisher    = {Soc.},
      reportid     = {FZJ-2024-04877},
      pages        = {7105-7118},
      year         = {2024},
      abstract     = {Plasma etching is a crucial step in semiconductor
                      manufacturing. High cleanliness and wafer-to-wafer
                      reproducibility in the etching chamber are essential in
                      order to successfully achieve nanometer-sized integrated
                      functions on the wafer. The trend toward the application of
                      more aggressive plasma compositions leads to higher demands
                      on the plasma resistance of the materials used in the
                      etching chamber. Due to its excellent etch resistance,
                      yttrium aluminum garnet Y3Al5O12 (YAG) is starting to
                      replace established materials like SiO2 or Al2O3 in this
                      kind of application. In this study, reactive spark plasma
                      sintering (SPS) was used to manufacture highly dense YAG
                      ceramics from the respective oxides. In addition, yttrium
                      was replaced with heavier lanthanoids (Er, Lu), intending to
                      investigate the role of the A-site cation in the garnet type
                      structure on the plasma erosion behavior. The produced
                      materials were exposed to fluorine-based etching plasmas
                      mimicking the conditions in the semiconductor manufacturing
                      apparatus and the erosion behavior was characterized by
                      atomic force microscopy (AFM), secondary ion mass
                      spectrometry (SIMS), transmission electron microscopy (TEM),
                      and profilometry. The induced chemical gradient in the
                      samples is limited to a few nanometers below the surface,
                      which makes its characterization challenging. For advanced
                      analysis, we developed a correlative characterization method
                      combining SIMS and scanning TEM (STEM)–energy-dispersive
                      spectroscopy (EDS) enabling us to examine the structural and
                      chemical changes in the reaction layer locally resolved. In
                      the case of lanthanoid aluminates, an altered reaction layer
                      and reduced fluorine penetration compared to YAG were found.
                      However, a correlation between the characteristics of the
                      induced chemical gradient and the determined physical
                      erosion rates was not evident.},
      cin          = {IMD-2 / ER-C-2 / IET-1 / JARA-ENERGY},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IMD-2-20101013 / I:(DE-Juel1)ER-C-2-20170209 /
                      I:(DE-Juel1)IET-1-20110218 / $I:(DE-82)080011_20140620$},
      pnm          = {1221 - Fundamentals and Materials (POF4-122) / DFG project
                      274005202 - SPP 1959: Manipulation of matter controlled by
                      electric and magnetic fields: Towards novel synthesis and
                      processing routes of inorganic materials (274005202)},
      pid          = {G:(DE-HGF)POF4-1221 / G:(GEPRIS)274005202},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001247850500001},
      doi          = {10.1111/jace.19951},
      url          = {https://juser.fz-juelich.de/record/1028934},
}