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@ARTICLE{Freter:1029011,
      author       = {Freter, Lars and Lymperakis, Liverios and Schnedler,
                      Michael and Eisele, Holger and Jin, Lei and Liu, Jianxun and
                      Sun, Qian and Dunin-Borkowski, Rafal E. and Ebert, Philipp},
      title        = {{C}omposition dependence of intrinsic surface states and
                      {F}ermi-level pinning at ternary {A}l x {G}a1− x {N} m
                      -plane surfaces},
      journal      = {Journal of vacuum science $\&$ technology / A},
      volume       = {42},
      number       = {2},
      issn         = {0734-2101},
      address      = {New York, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2024-04929},
      pages        = {023202},
      year         = {2024},
      abstract     = {Growth on nonpolar group III-nitride semiconductor surfaces
                      has been suggested to be a remedy for avoiding detrimental
                      polarization effects. However, the presence of intrinsic
                      surface states within the fundamental bandgap at nonpolar
                      surfaces leads to a Fermi-level pinning during growth,
                      affecting the incorporation of dopants and impurities. This
                      is further complicated by the use of ternary, e.g.,
                      Al(x)Ga(1-x)N layers in device structures. In order to
                      quantify the Fermi-level pinning on ternary group III
                      nitride nonpolar growth surface, the energy position of the
                      group III-derived empty dangling bond surface state at
                      nonpolar Al(x)Ga(1-x)N (10-10) surfaces is determined as a
                      function of the Al concentration using cross-sectional
                      scanning tunneling microscopy and spectroscopy. The
                      measurements show that the minimum energy of the empty
                      dangling bond state shifts linearly toward midgap for
                      increasing Al concentration with a slope of  ~5 $meV/\%.$
                      These experimental findings are supported by complementary
                      density functional theory calculations.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535) / DFG project 398305088 -
                      Grundlegende Eigenschaften nicht-polarer Oberflächen von
                      ternären Gruppe-III-Nitrid-Verbindungshalbleitern
                      (398305088)},
      pid          = {G:(DE-HGF)POF4-5353 / G:(GEPRIS)398305088},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001153140000005},
      doi          = {10.1116/6.0003225},
      url          = {https://juser.fz-juelich.de/record/1029011},
}