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| 001 | 1029011 | ||
| 005 | 20250204113913.0 | ||
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| 100 | 1 | _ | |a Freter, Lars |0 P:(DE-Juel1)176471 |b 0 |
| 245 | _ | _ | |a Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces |
| 260 | _ | _ | |a New York, NY |c 2024 |b Inst. |
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| 520 | _ | _ | |a Growth on nonpolar group III-nitride semiconductor surfaces has been suggested to be a remedy for avoiding detrimental polarization effects. However, the presence of intrinsic surface states within the fundamental bandgap at nonpolar surfaces leads to a Fermi-level pinning during growth, affecting the incorporation of dopants and impurities. This is further complicated by the use of ternary, e.g., Al(x)Ga(1-x)N layers in device structures. In order to quantify the Fermi-level pinning on ternary group III nitride nonpolar growth surface, the energy position of the group III-derived empty dangling bond surface state at nonpolar Al(x)Ga(1-x)N (10-10) surfaces is determined as a function of the Al concentration using cross-sectional scanning tunneling microscopy and spectroscopy. The measurements show that the minimum energy of the empty dangling bond state shifts linearly toward midgap for increasing Al concentration with a slope of ~5 meV/%. These experimental findings are supported by complementary density functional theory calculations. |
| 536 | _ | _ | |a 5353 - Understanding the Structural and Functional Behavior of Solid State Systems (POF4-535) |0 G:(DE-HGF)POF4-5353 |c POF4-535 |f POF IV |x 0 |
| 536 | _ | _ | |a DFG project 398305088 - Grundlegende Eigenschaften nicht-polarer Oberflächen von ternären Gruppe-III-Nitrid-Verbindungshalbleitern (398305088) |0 G:(GEPRIS)398305088 |c 398305088 |x 1 |
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| 700 | 1 | _ | |a Lymperakis, Liverios |0 0000-0002-4883-3728 |b 1 |
| 700 | 1 | _ | |a Schnedler, Michael |0 P:(DE-Juel1)143949 |b 2 |
| 700 | 1 | _ | |a Eisele, Holger |0 0000-0001-6603-0008 |b 3 |
| 700 | 1 | _ | |a Jin, Lei |0 P:(DE-Juel1)145711 |b 4 |
| 700 | 1 | _ | |a Liu, Jianxun |0 0000-0001-8485-166X |b 5 |
| 700 | 1 | _ | |a Sun, Qian |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Dunin-Borkowski, Rafal E. |0 P:(DE-Juel1)144121 |b 7 |
| 700 | 1 | _ | |a Ebert, Philipp |0 P:(DE-Juel1)130627 |b 8 |e Corresponding author |
| 773 | _ | _ | |a 10.1116/6.0003225 |g Vol. 42, no. 2, p. 023202 |0 PERI:(DE-600)1475424-1 |n 2 |p 023202 |t Journal of vacuum science & technology / A |v 42 |y 2024 |x 0734-2101 |
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