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000010291 084__ $$2WoS$$aPhysics, Multidisciplinary
000010291 1001_ $$0P:(DE-Juel1)VDB71268$$aRomanyuk, K.$$b0$$uFZJ
000010291 245__ $$aNanoscale Pit Formation at 2D Ge Layers on Si: Influence of Energy and Enropy
000010291 260__ $$aCollege Park, Md.$$bAPS$$c2009
000010291 300__ $$a096101
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000010291 440_0 $$04925$$aPhysical Review Letters$$v103$$x0031-9007$$y9
000010291 500__ $$aThe authors acknowledge critical reading of the manuscript by S. N. Filimonov and V. Cherepanov. We also acknowledge financial support from the EU Nanocage Project No. MEST-CT-2004-506854.
000010291 520__ $$aThe structural stability of two-dimensional (2D) SiGe nanostructures is studied by scanning tunneling microscopy. The formation of pits with a diameter of 2-30 nm in one atomic layer thick Ge stripes is observed. The unanticipated pit formation occurs due to an energetically driven motion of the Ge atoms out of the Ge stripe towards the Si terminated step edge followed by an entropy driven GeSi intermixing at the step edge. Using conditions where the pits coalesce results in the formation of freestanding 8 nm wide GeSi wires on Si(111).
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000010291 7001_ $$0P:(DE-HGF)0$$aBrona, J.$$b1
000010291 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b2$$uFZJ
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