TY  - JOUR
AU  - Romanyuk, K.
AU  - Brona, J.
AU  - Voigtländer, B.
TI  - Nanoscale Pit Formation at 2D Ge Layers on Si: Influence of Energy and Enropy
JO  - Physical review letters
VL  - 103
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-10291
SP  - 096101
PY  - 2009
N1  - The authors acknowledge critical reading of the manuscript by S. N. Filimonov and V. Cherepanov. We also acknowledge financial support from the EU Nanocage Project No. MEST-CT-2004-506854.
AB  - The structural stability of two-dimensional (2D) SiGe nanostructures is studied by scanning tunneling microscopy. The formation of pits with a diameter of 2-30 nm in one atomic layer thick Ge stripes is observed. The unanticipated pit formation occurs due to an energetically driven motion of the Ge atoms out of the Ge stripe towards the Si terminated step edge followed by an entropy driven GeSi intermixing at the step edge. Using conditions where the pits coalesce results in the formation of freestanding 8 nm wide GeSi wires on Si(111).
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000269718500042
DO  - DOI:10.1103/PhysRevLett.103.096101
UR  - https://juser.fz-juelich.de/record/10291
ER  -