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@ARTICLE{Qiu:1029103,
      author       = {Qiu, Depeng and Lambertz, Andreas and Duan, Weiyuan and
                      Mazzarella, Luana and Wagner, Philipp and Morales-Vilches,
                      Anna Belen and Yang, Guangtao and Procel, Paul and Isabella,
                      Olindo and Stannowski, Bernd and Ding, Kaining},
      title        = {{A} {R}eview: {A}pplication of {D}oped {H}ydrogenated
                      {N}anocrystalline {S}ilicon {O}xide in {H}igh {E}fficiency
                      {S}olar {C}ell {D}evices},
      journal      = {Advanced science},
      volume       = {11},
      number       = {35},
      issn         = {2198-3844},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2024-04963},
      pages        = {2403728},
      year         = {2024},
      abstract     = {Due to the unique microstructure of hydrogenated
                      nanocrystalline silicon oxide (nc-SiOx:H), the
                      optoelectronic properties of this material can be tuned over
                      a wide range, which makes it adaptable to different solar
                      cell applications. In this work, the authors review the
                      material properties of nc-SiOx:H and the versatility of its
                      applications in different types of solar cells. The review
                      starts by introducing the growth principle of doped
                      nc-SiOx:H layers, the effect of oxygen content on the
                      material properties, and the relationship between
                      optoelectronic properties and its microstructure. A
                      theoretical analysis of charge carrier transport mechanisms
                      in silicon heterojunction (SHJ) solar cells with wide band
                      gap layers is then presented. Afterwards, the authors focus
                      on the recent developments in the implementation of
                      nc-SiOx:H and hydrogenated amorphous silicon oxide
                      (a-SiOx:H) films for SHJ, passivating contacts, and
                      perovskite/silicon tandem devices.},
      cin          = {IMD-3},
      ddc          = {624},
      cid          = {I:(DE-Juel1)IMD-3-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {39023199},
      UT           = {WOS:001270660200001},
      doi          = {10.1002/advs.202403728},
      url          = {https://juser.fz-juelich.de/record/1029103},
}