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001029152 245__ $$aOrigin of giant enhancement of phase contrast in electron holography of modulation-doped n -type GaN
001029152 260__ $$aAmsterdam$$bElsevier Science$$c2024
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001029152 520__ $$aThe electron optical phase contrast probed by electron holography at n-n+ GaN doping steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than expected phase contrast reported for p-n junctions. We unravel the physical origin of the giant enhancement by combining off-axis electron holography data with self-consistent electrostatic potential calculations. The predominant contribution to the phase contrast is shown to arise from the doping dependent screening length of the surface Fermi-level pinning, which is induced by FIB-implanted carbon point defects below the outer amorphous shell. The contribution of the built-in potential is negligible for modulation doping and only relevant for large built-in potentials at e.g. p-n junctions. This work provides a quantitative approach to so-called dead layers at TEM lamellas.
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001029152 7001_ $$0P:(DE-Juel1)143949$$aSchnedler, M.$$b1$$ufzj
001029152 7001_ $$0P:(DE-Juel1)173944$$aLan, Q.$$b2$$ufzj
001029152 7001_ $$0P:(DE-HGF)0$$aCarlin, J.-F.$$b3
001029152 7001_ $$0P:(DE-HGF)0$$aButté, R.$$b4
001029152 7001_ $$0P:(DE-HGF)0$$aGrandjean, N.$$b5
001029152 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, R. E.$$b6$$ufzj
001029152 7001_ $$0P:(DE-Juel1)130627$$aEbert, Philipp$$b7$$eCorresponding author
001029152 773__ $$0PERI:(DE-600)1479043-9$$a10.1016/j.ultramic.2024.114006$$gVol. 264, p. 114006 -$$p114006 -$$tUltramicroscopy$$v264$$x0304-3991$$y2024
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