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@ARTICLE{Ji:1029152,
      author       = {Ji, K. and Schnedler, M. and Lan, Q. and Carlin, J.-F. and
                      Butté, R. and Grandjean, N. and Dunin-Borkowski, R. E. and
                      Ebert, Philipp},
      title        = {{O}rigin of giant enhancement of phase contrast in electron
                      holography of modulation-doped n -type {G}a{N}},
      journal      = {Ultramicroscopy},
      volume       = {264},
      issn         = {0304-3991},
      address      = {Amsterdam},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2024-05005},
      pages        = {114006 -},
      year         = {2024},
      abstract     = {The electron optical phase contrast probed by electron
                      holography at n-n+ GaN doping steps is found to exhibit a
                      giant enhancement, in sharp contrast to the always smaller
                      than expected phase contrast reported for p-n junctions. We
                      unravel the physical origin of the giant enhancement by
                      combining off-axis electron holography data with
                      self-consistent electrostatic potential calculations. The
                      predominant contribution to the phase contrast is shown to
                      arise from the doping dependent screening length of the
                      surface Fermi-level pinning, which is induced by
                      FIB-implanted carbon point defects below the outer amorphous
                      shell. The contribution of the built-in potential is
                      negligible for modulation doping and only relevant for large
                      built-in potentials at e.g. p-n junctions. This work
                      provides a quantitative approach to so-called dead layers at
                      TEM lamellas.},
      cin          = {ER-C-1},
      ddc          = {570},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535) / DFG project 398305088 -
                      Grundlegende Eigenschaften nicht-polarer Oberflächen von
                      ternären Gruppe-III-Nitrid-Verbindungshalbleitern
                      (398305088) / AIDAS - Joint Virtual Laboratory for AI, Data
                      Analytics and Scalable Simulation $(aidas_20200731)$},
      pid          = {G:(DE-HGF)POF4-5353 / G:(GEPRIS)398305088 /
                      $G:(DE-Juel-1)aidas_20200731$},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {38878506},
      UT           = {WOS:001257778200001},
      doi          = {10.1016/j.ultramic.2024.114006},
      url          = {https://juser.fz-juelich.de/record/1029152},
}