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| 001 | 1029152 | ||
| 005 | 20250401102819.0 | ||
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| 245 | _ | _ | |a Origin of giant enhancement of phase contrast in electron holography of modulation-doped n -type GaN |
| 260 | _ | _ | |a Amsterdam |c 2024 |b Elsevier Science |
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| 520 | _ | _ | |a The electron optical phase contrast probed by electron holography at n-n+ GaN doping steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than expected phase contrast reported for p-n junctions. We unravel the physical origin of the giant enhancement by combining off-axis electron holography data with self-consistent electrostatic potential calculations. The predominant contribution to the phase contrast is shown to arise from the doping dependent screening length of the surface Fermi-level pinning, which is induced by FIB-implanted carbon point defects below the outer amorphous shell. The contribution of the built-in potential is negligible for modulation doping and only relevant for large built-in potentials at e.g. p-n junctions. This work provides a quantitative approach to so-called dead layers at TEM lamellas. |
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| 700 | 1 | _ | |a Ebert, Philipp |0 P:(DE-Juel1)130627 |b 7 |e Corresponding author |
| 773 | _ | _ | |a 10.1016/j.ultramic.2024.114006 |g Vol. 264, p. 114006 - |0 PERI:(DE-600)1479043-9 |p 114006 - |t Ultramicroscopy |v 264 |y 2024 |x 0304-3991 |
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