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@INPROCEEDINGS{Stern:1029431,
      author       = {Stern, Christian and Kindelmann, Moritz and Schwab,
                      Christian and Park, Inhee and Bram, Martin and Guillon,
                      Olivier},
      title        = {{R}eactive {F}ield {A}ssisted {S}intering ({FAST}/{SPS}) of
                      various garnets for plasma etching applications},
      reportid     = {FZJ-2024-05123},
      year         = {2023},
      abstract     = {Plasma etching is a crucial step in semiconductor
                      manufacturing. When the plasma is applied on the wafer,
                      chamber cleanliness and reproducibility of the etching
                      process are essential. The trend towards more aggressive
                      etching environments requires advanced chamber components
                      with excellent plasma resistance in the etching chamber. To
                      tackle this issue, there is an increasing interest of better
                      understanding the specific erosion mechanisms of etch
                      resistant ceramics. At the current state of development,
                      Yttrium-Aluminum-Garnet (YAG) shows promise in highly
                      aggressive etching environments. In this study, we present a
                      novel approach to manufacture highly dense YAG ceramics by
                      means of reactive field assisted sintering technology/ spark
                      plasma sintering (reactive FAST/SPS) of the respective
                      oxides. FAST/SPS offers several advantages over conventional
                      sintering techniques, e.g. shorter processing times, energy
                      and cost efficiency as well as consolidation close to the
                      theoretical density. To better understand the plasma
                      resistance of YAG alternative lanthanides (Lu, Yb, Er)
                      aluminates were created to identify the influence of the
                      lanthanide atom in the YAG type structure on the
                      plasma-material response. For applied characterization,
                      samples were exposed to fluorine based etching plasmas
                      (CF4/O2) using an inductively coupled plasma (ICP) etch
                      chamber. The resulting topography and induced chemical
                      reactions were characterized by atomic force microscopy
                      (AFM) and secondary in mass spectrometry (SIMS)
                      respectively.},
      month         = {Jul},
      date          = {2023-07-02},
      organization  = {XVIIIth Conference of the European
                       Ceramic Society, Lyon (France), 2 Jul
                       2023 - 6 Jul 2023},
      subtyp        = {After Call},
      cin          = {IEK-1 / ER-C-2 / IEK-9 / JARA-ENERGY},
      cid          = {I:(DE-Juel1)IEK-1-20101013 / I:(DE-Juel1)ER-C-2-20170209 /
                      I:(DE-Juel1)IEK-9-20110218 / $I:(DE-82)080011_20140620$},
      pnm          = {899 - ohne Topic (POF4-899) / DFG project 274005202 - SPP
                      1959: Manipulation of matter controlled by electric and
                      magnetic fields: Towards novel synthesis and processing
                      routes of inorganic materials (274005202)},
      pid          = {G:(DE-HGF)POF4-899 / G:(GEPRIS)274005202},
      typ          = {PUB:(DE-HGF)6},
      doi          = {10.34734/FZJ-2024-05123},
      url          = {https://juser.fz-juelich.de/record/1029431},
}