% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{CorleyWiciak:1029435,
author = {Corley-Wiciak, Cedric and Zoellner, Marvin H. and
Corley-Wiciak, Agnieszka A. and Rovaris, Fabrizio and
Zatterin, Edoardo and Zaitsev, Ignatii and Sfuncia,
Gianfranco and Nicotra, Giuseppe and Spirito, Davide and von
den Driesch, Nils and Manganelli, Costanza L. and
Marzegalli, Anna and Schulli, Tobias U. and Buca, Dan and
Montalenti, Francesco and Capellini, Giovanni and Richter,
Carsten},
title = {{F}ull {P}icture of {L}attice {D}eformation in a {G}e 1-x
{S}n x {M}icro‐{D}isk by 5{D} {X}‐ray {D}iffraction
{M}icroscopy},
journal = {Small Methods},
volume = {8},
number = {12},
issn = {2366-9608},
address = {Weinheim},
publisher = {WILEY-VCH Verlag GmbH $\&$ Co. KGaA},
reportid = {FZJ-2024-05124},
pages = {2400598},
year = {2024},
abstract = {Lattice strain in crystals can be exploited to effectively
tune their physical properties. In microscopic structures,
experimental access to the full strain tensor with spatial
resolution at the (sub-)micrometer scale is at the same time
very interesting and challenging. In this work, how scanning
X-ray diffraction microscopy, an emerging model-free method
based on synchrotron radiation, can shed light on the
complex, anisotropic deformation landscape within three
dimensional (3D) microstructures is shown. This technique
allows the reconstruction of all lattice parameters within
any type of crystal with submicron spatial resolution and
requires no sample preparation. Consequently, the local
state of deformation can be fully quantified. Exploiting
this capability, all components of the strain tensor in a
suspended, strained Ge1 − xSnx /Ge microdisk are mapped.
Subtle elastic deformations are unambiguously correlated
with structural defects, 3D microstructure geometry, and
chemical variations, as verified by comparison with
complementary electron microscopy and finite element
simulations. The methodology described here is applicable to
a wide range of fields, from bioengineering to metallurgy
and semiconductor research.},
cin = {PGI-9 / PGI-10 / JARA-FIT},
ddc = {620},
cid = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-10-20170113 /
$I:(DE-82)080009_20140620$},
pnm = {5234 - Emerging NC Architectures (POF4-523) / DFG project
G:(GEPRIS)299480227 - SiGeSn Laser für die Silizium
Photonik (299480227)},
pid = {G:(DE-HGF)POF4-5234 / G:(GEPRIS)299480227},
typ = {PUB:(DE-HGF)16},
pubmed = {39075823},
UT = {WOS:001280201100001},
doi = {10.1002/smtd.202400598},
url = {https://juser.fz-juelich.de/record/1029435},
}