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@ARTICLE{Myslivecek:10295,
      author       = {Myslivecek, J. and Dvorak, F. and Strozecka, A. and
                      Voigtländer, B.},
      title        = {{S}canning tunneling microscopy contrast in lateral
                      {G}e-{S}i nanostructures on {S}i(111)-3x3-{B}i},
      journal      = {Physical review / B},
      volume       = {81},
      number       = {24},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-10295},
      pages        = {245427},
      year         = {2010},
      note         = {We would like to thank Vasily Cherepanov, Neelima Paul, and
                      Kurt Schroeder for many helpful discussions and Helmut
                      Stollwerk and Peter Coenen for the expert technical
                      assistance. J.M. acknowledges the support of the research
                      Program No. MSM 0021620834 of the Ministry of Education of
                      the Czech Republic. F. D. acknowledges the support of the
                      research Program No. GAUK 92209 of the Grant Agency of the
                      Charles University. A. S. acknowledges the support of
                      European Union FP6 project NANOCAGE (Grant No.
                      MEST-CT-2004-50-6854)},
      abstract     = {We investigate the origin of scanning tunneling microscope
                      (STM) contrast in lateral Ge-Si nanostructures prepared on
                      the Si(111)-root 3x root 3-Bi surface [M. Kawamura, N. Paul,
                      V. Cherepanov, and B. Voigtlander, Phys. Rev. Lett. 91,
                      096102 (2003)]. At low sample bias, the voltage-dependent
                      apparent height difference between Si-and Ge-terminated
                      areas in STM images corresponds exceptionally well to the
                      difference in voltage-integrated scanning tunneling
                      spectroscopy (STS) curves measured in Si-and Ge-terminated
                      areas. The STS curves and the STM contrast reflect both
                      differences in local density of states and in tip-induced
                      effects in Si- and Ge-terminated areas. At higher bias
                      voltage, the tunneling into unoccupied states on
                      Ge-terminated areas is strongly influenced by lowering of
                      the local height of the tunneling barrier with respect to
                      Si. The lowering of the local tunneling barrier height
                      vanishes for the occupied states and can be traced back to
                      different tip-induced band bending on Si-and Ge-terminated
                      areas.},
      keywords     = {J (WoSType)},
      cin          = {IBN-3 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB801 / $I:(DE-82)080009_20140620$},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000279145200001},
      doi          = {10.1103/PhysRevB.81.245427},
      url          = {https://juser.fz-juelich.de/record/10295},
}