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001030943 0247_ $$2datacite_doi$$a10.34734/FZJ-2024-05534
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001030943 1001_ $$0P:(DE-Juel1)188691$$aKuriakose, Neethu$$b0$$ufzj
001030943 1112_ $$aInternational Conference on Neuromorphic Systems$$cArlington, Virginia$$d2024-07-29 - 2024-08-02$$gICONS 2024$$wUSA
001030943 245__ $$a2T1R Regulated Memristor Conductance Control Array Architecture for Neuromorphic Computing using 28 nm CMOS Technology
001030943 260__ $$c2024
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001030943 502__ $$cUniversity of Duisburg Essen
001030943 520__ $$aMemristors are promising devices for scalable andlow power, in-memory computing to improve the energy efficiencyof a rising computational demand. The crossbar array architecturewith memristors is used for vector matrix multiplication(VMM) and acts as kernels in neuromorphic computing. Theanalog conductance control in a memristor is achieved byapplying voltage or current through it. A basic 1T1R arrayis suitable to avoid sneak path issues but suffer from wireresistances, which affects the read and write procedures. Aconductance control scheme with a regulated voltage sourcewill improve the architecture and reduce the possible potentialdivider effects. A change in conductance is also possible with theprovision of a regulated current source and measuring the voltageacross the memristors. A regulated 2T1R memristor conductancecontrol architecture is proposed in this work, which avoids thepotential divider effect and virtual ground scenario in a regularcrossbar scheme, as well as conductance control by passing aregulated current through memristors. The sneak path currentis not allowed to pass by the provision of ground potential toboth terminals of memristors.
001030943 536__ $$0G:(DE-HGF)POF4-5234$$a5234 - Emerging NC Architectures (POF4-523)$$cPOF4-523$$fPOF IV$$x0
001030943 536__ $$0G:(DE-82)BMBF-16ME0398K$$aBMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K)$$cBMBF-16ME0398K$$x1
001030943 65017 $$0V:(DE-MLZ)GC-1601-2016$$2V:(DE-HGF)$$aEngineering, Industrial Materials and Processing$$x0
001030943 7001_ $$0P:(DE-Juel1)176328$$aAshok, Arun$$b1$$ufzj
001030943 7001_ $$0P:(DE-Juel1)187432$$aKusuma, Sabitha$$b2$$ufzj
001030943 7001_ $$0P:(DE-Juel1)184687$$aWinterberg, Kay$$b3$$ufzj
001030943 7001_ $$0P:(DE-Juel1)159350$$aGrewing, Christian$$b4$$ufzj
001030943 7001_ $$0P:(DE-Juel1)145837$$aZambanini, Andre$$b5$$ufzj
001030943 7001_ $$0P:(DE-Juel1)142562$$avan Waasen, Stefan$$b6$$ufzj
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001030943 9201_ $$0I:(DE-Juel1)ZEA-2-20090406$$kZEA-2$$lZentralinstitut für Elektronik$$x0
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