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@INPROCEEDINGS{Kuriakose:1030943,
      author       = {Kuriakose, Neethu and Ashok, Arun and Kusuma, Sabitha and
                      Winterberg, Kay and Grewing, Christian and Zambanini, Andre
                      and van Waasen, Stefan},
      title        = {2{T}1{R} {R}egulated {M}emristor {C}onductance {C}ontrol
                      {A}rray {A}rchitecture for {N}euromorphic {C}omputing using
                      28 nm {CMOS} {T}echnology},
      school       = {University of Duisburg Essen},
      reportid     = {FZJ-2024-05534},
      year         = {2024},
      abstract     = {Memristors are promising devices for scalable andlow power,
                      in-memory computing to improve the energy efficiencyof a
                      rising computational demand. The crossbar array
                      architecturewith memristors is used for vector matrix
                      multiplication(VMM) and acts as kernels in neuromorphic
                      computing. Theanalog conductance control in a memristor is
                      achieved byapplying voltage or current through it. A basic
                      1T1R arrayis suitable to avoid sneak path issues but suffer
                      from wireresistances, which affects the read and write
                      procedures. Aconductance control scheme with a regulated
                      voltage sourcewill improve the architecture and reduce the
                      possible potentialdivider effects. A change in conductance
                      is also possible with theprovision of a regulated current
                      source and measuring the voltageacross the memristors. A
                      regulated 2T1R memristor conductancecontrol architecture is
                      proposed in this work, which avoids thepotential divider
                      effect and virtual ground scenario in a regularcrossbar
                      scheme, as well as conductance control by passing aregulated
                      current through memristors. The sneak path currentis not
                      allowed to pass by the provision of ground potential toboth
                      terminals of memristors.},
      month         = {Jul},
      date          = {2024-07-29},
      organization  = {International Conference on
                       Neuromorphic Systems, Arlington,
                       Virginia (USA), 29 Jul 2024 - 2 Aug
                       2024},
      subtyp        = {After Call},
      cin          = {ZEA-2},
      cid          = {I:(DE-Juel1)ZEA-2-20090406},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / BMBF
                      16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien
                      der künstlichen Intelligenz für die Elektronik der Zukunft
                      - NEUROTEC II - (BMBF-16ME0398K)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(DE-82)BMBF-16ME0398K},
      typ          = {PUB:(DE-HGF)24},
      doi          = {10.34734/FZJ-2024-05534},
      url          = {https://juser.fz-juelich.de/record/1030943},
}