TY  - JOUR
AU  - Duan, Weiyuan
AU  - Rudolph, Toby
AU  - Gebrewold, Habtamu Tsegaye
AU  - Bittkau, Karsten
AU  - Lambertz, Andreas
AU  - Qiu, Depeng
AU  - Yaqin, Muhammad Ainul
AU  - Xu, Xixiang
AU  - Ding, Kaining
AU  - Rau, Uwe
TI  - Insights into the Heat‐Assisted Intensive Light‐Soaking Effect on Silicon Heterojunction Solar Cells
JO  - Solar RRL
VL  - 8
IS  - 19
SN  - 2367-198X
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2024-05804
SP  - 2400383
PY  - 2024
AB  - Heat-assisted intensive light soaking has been proposed as an effective posttreatment to further enhance the performance of silicon heterojunction (SHJ) solar cells. In the current study, it is aimed to distinguish the effects of heat and illumination on different (doped and undoped) layers of the SHJ contact stack. It is discovered that both elevated temperature and illumination are necessary to significantly reduce interface recombination when working effectively together. The synergistic effect on passivation displays a thermal activation energy of approximately 0.5 eV. This is likely due to the photogenerated electron/hole pairs in the c–Si wafer, where nearly all of the incident light is absorbed. By distinguishing between the effects of light and heat effects on the conductivity of p- and n-type doped hydrogenated amorphous silicon (a–Si:H) layers, it is demonstrated that only heat is accountable for the observed rise in conductivity. According to numerical device simulations, the significant contribution to the open-circuit voltage enhancement arises from the reduced density of defect states at the c–Si/intrinsic a–Si:H interface. In addition, the evolution of the fill factor is highly dependent on changes in interface defect density and the band tail state density of p-type a–Si:H.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001302014000001
DO  - DOI:10.1002/solr.202400383
UR  - https://juser.fz-juelich.de/record/1031768
ER  -