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@ARTICLE{Duan:1031768,
      author       = {Duan, Weiyuan and Rudolph, Toby and Gebrewold, Habtamu
                      Tsegaye and Bittkau, Karsten and Lambertz, Andreas and Qiu,
                      Depeng and Yaqin, Muhammad Ainul and Xu, Xixiang and Ding,
                      Kaining and Rau, Uwe},
      title        = {{I}nsights into the {H}eat‐{A}ssisted {I}ntensive
                      {L}ight‐{S}oaking {E}ffect on {S}ilicon {H}eterojunction
                      {S}olar {C}ells},
      journal      = {Solar RRL},
      volume       = {8},
      number       = {19},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2024-05804},
      pages        = {2400383},
      year         = {2024},
      abstract     = {Heat-assisted intensive light soaking has been proposed as
                      an effective posttreatment to further enhance the
                      performance of silicon heterojunction (SHJ) solar cells. In
                      the current study, it is aimed to distinguish the effects of
                      heat and illumination on different (doped and undoped)
                      layers of the SHJ contact stack. It is discovered that both
                      elevated temperature and illumination are necessary to
                      significantly reduce interface recombination when working
                      effectively together. The synergistic effect on passivation
                      displays a thermal activation energy of approximately
                      0.5 eV. This is likely due to the photogenerated
                      electron/hole pairs in the c–Si wafer, where nearly all of
                      the incident light is absorbed. By distinguishing between
                      the effects of light and heat effects on the conductivity of
                      p- and n-type doped hydrogenated amorphous silicon
                      (a–Si:H) layers, it is demonstrated that only heat is
                      accountable for the observed rise in conductivity. According
                      to numerical device simulations, the significant
                      contribution to the open-circuit voltage enhancement arises
                      from the reduced density of defect states at the
                      c–Si/intrinsic a–Si:H interface. In addition, the
                      evolution of the fill factor is highly dependent on changes
                      in interface defect density and the band tail state density
                      of p-type a–Si:H.},
      cin          = {IMD-3},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IMD-3-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001302014000001},
      doi          = {10.1002/solr.202400383},
      url          = {https://juser.fz-juelich.de/record/1031768},
}