TY  - JOUR
AU  - Kaul, Prateek
AU  - Concepción, Omar
AU  - Wielens, Daan H.
AU  - Zellekens, Patrick
AU  - Li, Chuan
AU  - Ikonic, Zoran
AU  - Ishibashi, Koji
AU  - Zhao, Qing-Tai
AU  - Brinkman, Alexander
AU  - Grützmacher, Detlev
AU  - Buca, Dan
TI  - Phase‐Coherent Transport in GeSn Alloys on Si
JO  - Advanced electronic materials
VL  - 11
IS  - 2
SN  - 2199-160X
CY  - Weinheim
PB  - Wiley-VCH Verlag GmbH & Co. KG
M1  - FZJ-2024-06046
SP  - 2400565
PY  - 2025
AB  - Germanium-Tin (GeSn) is a novel semiconductor Group IV alloy that can be tuned from indirect to direct bandgap semiconductors by adjusting the Sn content. This property makes this alloy class attractive for integrated photonic applications and high-mobility electronic devices. In this work, the GeSn alloy properties are investigated in the view of applications fields such as spintronics and quantum computing. Using low-temperature magneto-transport measurements, electron interference effects and deriving typical mesoscopic benchmark parameters such as the phase-coherence length in GeSn-based Hall bar structures for Sn concentrations up to 14 at.% is investigated. Furthermore, Shubnikov–de Haas oscillations provide direct access to the effective mass of the Γ-valley electrons as well as the charge carrier mobility. This work provides a new insight into advanced group IV alloys desired for the study of spin dynamics and its quantum computing applications.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001357213800001
DO  - DOI:10.1002/aelm.202400565
UR  - https://juser.fz-juelich.de/record/1032177
ER  -